V. V. Shchennikov < V. V. Sherstnev < V. V. Shishkov

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 39.
[0-20] [0 - 20][0 - 39][20-38][20-40]

Ident.	Authors (with country if any)	Title
000105 (2010)		Narrow gap III-V materials for infrared photodiodes and thermophotovoltaic cells
000752 (2002-04-22)		Optical switching in midinfrared light-emitting diodes
000A25 (2000-12-11)		Superluminescence in InAsSb circular-ring-mode light-emitting diodes for CO gas detection
000A37 (2000-11)		InAsSb/InAsSbP Double-Heterostructure Lasers Emitting at 3-4 μm: Part I
000A43 (2000-09-20)		Tunable InAsSb/InAsSbP Laser with a Low Radiation Divergence in the p-n-Junction Plane
000A53 (2000-08-07)		Room-temperature InAs0.89Sb0.11 photodetectors for CO detection at 4.6 μm
000B18 (2000-02)		Single-Mode InAsSb/InAsSbP Laser (λ ≃ 3.2 μm) Tunable over 100 Å
000C21 (1999-12)		Two-mode diode-laser spectroscopy with a InAsSb/InAsSbP laser near 3.6 μm
000C41 (1999-10)		InAsSb/InAsSbP heterostructure lasers with a large range of current tuning of the lasing frequency
000C51 (1999-09)		Short-wavelength current tuning of InAsSb/InAsSbP heterostructure lasers caused by an injection nonuniformity
000C63 (1999-08)		Spatial beam oscillations in stripe lasers utilizing InAsSb/InAsSbP heterojunctions
000C81 (1999-07)		Electrical properties of epitaxial indium arsenide and narrow band solid solutions based on it
000C84 (1999-06-15)		Purification of epitaxial InAs grown by liquid phase epitaxy using gadolinium gettering
000D17 (1999-03)		Suppression of Auger recombination in diode lasers utilizing InAsSb/InAsSbP and InAs/GaInAsSb type-II heterojunctions
000D24 (1999-02)		Rapid tuning of the generation frequency of InAsSb/InAsSbP diode lasers (λ=3.3μm) due to nonlinear optical effects
000D29 (1999-02)		High-power light-emitting diodes operating in the 1.9 to 2.1-μm spectral range
000D90 (1999)		High power 4.6 μm light emitting diodes for CO detection
000E28 (1998-11)		Scanning electron microscopy of long-wavelength laser structures
000E40 (1998-09)		Spectral and mode characteristics of InAsSbP/InAsSb/InAsSbP lasers in the spectral region near 3.3 μm
000E92 (1998-03)		Spatial distribution of the radiation in the far zone of InAsSb/InAsSbP mesastrip lasers as a function of current
000E96 (1998-03)		Electrical properties of GaSb-based solid solutions (GaInAsSb, GaAlSb, GaAlAsSb) and their compositional dependence

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List of associated KwdEn.i

Nombre de documents	Descripteur
33	Experimental study
23	Indium compounds
20	Semiconductor lasers
19	III-V semiconductors
8	Semiconductor materials
7	LPE
7	Laser tuning
7	Theoretical study
6	Carrier density
6	Inorganic compound
6	Temperature
5	Antimony compounds
5	Arsenic compounds
5	Chemical composition
5	Indium Arsenides
5	Semiconductor heterojunctions
4	Acceptor center
4	Charge carrier concentration
4	Charge carrier mobility
4	Gallium compounds
4	Hall effect
4	Indium Antimonides arsenides phosphides
4	Laser modes
4	Solid solution
3	Donor center
3	Doping
3	Electrical conductivity
3	Energy gap
3	Gallium Indium Antimonides arsenides Mixed
3	Gallium arsenides
3	Gas sensors
3	Impurity density
3	Indium antimonides
3	Indium arsenides
3	Indium phosphides
3	Light emitting diodes
3	Low temperature
3	Photoconductivity
3	Semiconductor epitaxial layers
2	Aluminium compounds
2	Auger effect
2	Current density
2	Electron-hole recombination
2	Epitaxial film
2	Fabrication
2	Gadolinium
2	Heterojunction
2	Impurity level
2	Impurity states
2	Line intensity
2	Magnetoconductivity
2	Narrow band gap semiconductors
2	Nonlinear optics
2	Photoluminescence
2	Semiconductor growth
2	Tellurium
2	Tin
1	Activation energy
1	Air pollution measurement
1	Ambient temperature
1	Antimony Arsenic Gallium Indium Compounds
1	Aqueous solutions
1	Auger recombination
1	Binary compounds
1	Carbon compounds
1	Carbon monoxide
1	Carrier mobility
1	Carrier relaxation time
1	Charge carrier recombination
1	Charge carrier scattering
1	Crystal defect
1	Crystal purification
1	Defect level
1	Defect states
1	Detectivity
1	Diodes
1	Dislocation
1	Double heterojunction
1	Electroluminescence
1	Emission spectra
1	Excitons
1	Fourier transformation
1	Gallium Antimonides
1	Gallium Lead Antimonides arsenides Mixed
1	Gas detector
1	Gettering
1	Getters
1	Growth from liquid
1	Heterojunctions
1	Heterostructures
1	High power
1	High temperature
1	Hole
1	Holmium
1	Impurity
1	Impurity diffusion
1	Indium Antimonides
1	Indium Antimonides arsenides
1	Indium Phosphides
1	Infrared detectors

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