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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « V. V. Preobrazhenskii »
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V. V. Postnikov < V. V. Preobrazhenskii < V. V. Preobrazheskii  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 18.
Ident.Authors (with country if any)Title
000088 (2011) 115 fs pulses from Yb3+:KY(WO4)2 laser with low loss nanostructured saturable absorber
000095 (2010) Semiconductor Nanostructures Modified by the UV Laser Radiation
000649 (2003) InP decomposition phosphorus beam source for MBE: design, properties and superlattice growth
000650 (2003) InGaAsP/InGaP superlattices by conventional MBE with molten metal solution phosphorus source
000855 (2002) A technique for fabricating InGaAs/GaAs nanotubes of precisely controlled lengths
000C40 (1999-10) Influence of indium doping on the formation of silicon-(gallium vacancy) complexes in gallium arsenide grown by molecular-beam epitaxy at low temperatures
000C62 (1999-08) Structure and properties of InGaAs layers grown by low-temperature molecular-beam epitaxy
000D12 (1999-03-15) Enhanced precipitation of excess As on antimony delta layers in low-temperature-grown GaAs
000D68 (1999) Ordered arrays of arsenic clusters coincided with InAs/GaAs superlattices grown by low-temperature MBE
000E36 (1998-10) Arsenic cluster superlattice in gallium arsenide grown by low-temperature molecular-beam epitaxy
000E58 (1998-07) Indium layers in low-temperature gallium arsenide: structure and how it changes under annealing in the temperature range 500-700 °C
000E61 (1998-07) Effect of isovalent indium doping on excess arsenic in gallium arsenide grown by molecular-beam epitaxy at low temperatures
000F06 (1998-01) High-resolution x-ray diffraction study of InAs-GaAs superlattices grown by molecular-beam epitaxy at low temperature
001029 (1997-06-09) Enhanced arsenic excess in low-temperature grown GaAs due to indium doping
001069 (1997) Two-dimensional precipitation of As clusters due to indium delta-doping of GaAs films grown by molecular beam epitaxy at low temperature
001100 (1997) Ostwald ripening in two-dimensional and three-dimensional systems of As clusters in low temperature grown GaAs films
001272 (1995-12) Spatial ordering of arsenic clusters in GaAs layers grown by molecular-beam epitaxy at low temperature
001902 (1990) Mechanism of the influence of isovalent in impurities on the properties and ensemble of defects in GaAs grown by the molecular beam epitaxy method

List of associated KwdEn.i

Nombre de
documents		Descripteur
15Experimental study
13Gallium arsenides
13Molecular beam epitaxy
10III-V semiconductors
6Annealing
5Indium
5Semiconductor epitaxial layers
5Semiconductor growth
5TEM
4Binary compounds
4Semiconductor doping
4Semiconductor materials
4XRD
3Epitaxial layers
3Gallium Arsenides
3Indium arsenides
3Indium compounds
3Infrared spectra
3Superlattices
3Ternary compounds
2Arsenic
2Beryllium additions
2Chemical interdiffusion
2Crystal growth from vapors
2Gallium phosphides
2Heterostructures
2Indium Arsenides
2Indium phosphides
2Interface structure
2Multilayers
2Nanostructures
2Optical properties
2Photoluminescence
2Point defects
2Precipitation
2Quantum wells
2Semiconductor superlattices
2Silicon additions
2Thermal annealing
2Thin films
1Acceptor center
1Aggregate
1Antimony
1Antisite defect
1Atomic clusters
1Carbon
1Charge carrier recombination
1Charge carriers
1Chemical composition
1Cluster
1Crystal defect density
1Crystal doping
1Donor center
1Doped materials
1Doping
1Doping profiles
1Electron density
1Epitaxial film
1Excimer lasers
1Exciton
1Gas lasers
1Impurity absorption spectra
1Impurity density
1Impurity site
1Impurity-vacancy interactions
1Indium additions
1Inorganic compound
1Island structure
1Laser irradiation
1Lattice parameters
1Light transmission
1Low temperature
1Manufacturing processes
1Mirrors
1Nanostructured materials
1Nanotubes
1Non stoichiometric composition
1Nondestructive testing
1Operating mode
1Optical testing
1Ordering
1Ostwald ripening
1Physical radiation effects
1Planar doping
1Precipitation (chemical)
1Process control
1Reflectors
1Saturable absorbers
1Saturable absorption
1Semiconductor-metal boundaries
1Silicon
1Solid clusters
1Solid source molecular beam epitaxy
1Spatial distribution
1Stoichiometry
1Sublattice
1Sublattices
1Surface topography
1Theoretical study
1Transmission electron microscopy

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