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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « V. V. Mamutin »
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V. V. Mamedov < V. V. Mamutin < V. V. Martynov  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 17.
Ident.Authors (with country if any)Title
000349 (2005) Properties of InGaAsN heterostructures emitting at 1.3-1.55 μm
000417 (2004-03) Structural and Optical Properties of Heterostructures with InAs Quantum Dots in an InGaAsN Quantum Well Grown by Molecular-Beam Epitaxy
000553 (2003-05) Longwave Generation in Laser Structures Based on InGaAs(N) Quantum Wells on GaAs Substrates
000593 (2003) Valence band structure of GaAsN compounds and band-edge lineup in GaAs/GaAsN/InGaAs heterostructures
000705 (2002-12) Band-Edge Line-up in GaAs/GaAsN/InGaAs Heterostructures
000709 (2002-11) Room-Temperature Photoluminescence at 1.55 μm from Heterostructures with InAs/InGaAsN Quantum Dots on GaAs Substrates
000899 (2001-05) X-ray Diffractometric Study of the Influence of a Buffer Layer on the Microstructure of Molecular-Beam Epitaxial InN Layers of Different Thicknesses
000954 (2001) Physical properties of InN with the band gap energy of 1.1 eV
000B84 (2000) Hexagonal InN/sapphire heterostructures: interplay of interface and layer properties
000C26 (1999-11-22) Experimental and theoretical studies of phonons in hexagonal InN
000C57 (1999-09) Growth of A3N whiskers and plate-shaped crystals by molecular-beam epitaxy with the participation of the liquid phase
000D63 (1999) Plasma-assisted MBE growth of GaN and InGaN on different substrates
001B20 (1988)
001D55 (1986)
001E23 (1985)
001E71 (1984)
001E94 (1984)

List of associated KwdEn.i

Nombre de
documents		Descripteur
13Experimental study
9Molecular beam epitaxy
7Indium compounds
6Gallium arsenides
6Photoluminescence
5Gallium Indium Arsenides Mixed
5Indium Phosphides
4Indium nitrides
4Nitrogen compounds
4XRD
3Heterojunction
3Heterostructures
3III-V semiconductors
3Semiconductor materials
2Binary compounds
2Doping
2Electrical conductivity
2Energy gap
2Epitaxial layers
2Gallium compounds
2Gallium nitrides
2Indium arsenides
2Interface
2Raman spectra
2SIMS
2Semiconductor heterojunctions
2Semiconductor quantum dots
2Ternary compounds
2Transmission electron microscopy
2Wide band gap semiconductors
1Absorption spectra
1Aluminium oxides
1Anisotropy
1Annealing
1Anomaly
1Arsenic compounds
1Background noise
1Band offset
1Band splitting
1Band structure
1Characterization
1Charge carrier concentration
1Charge carrier mobility
1Chemical composition
1Crystal defects
1Crystal growth from vapors
1Crystallization
1Current density
1Debye temperature
1Deformation
1Dislocations
1Doped materials
1Electric breakdown
1Electric current
1Electrical instability
1Electron gas
1Energy levels
1Energy-level transitions
1Filament
1Free carrier
1Gallium Indium Arsenides phosphides Mixed
1Heterogeneity
1Hexagonal lattices
1High temperature
1Impurities
1Infrared spectra
1Inorganic compound
1Interfacial layer
1Junction
1LPE
1Lanthanide
1Leakage current
1Liquid state
1Localized electron
1Localized states
1Magnesium additions
1Magnetic field
1Magnetic field effects
1Magnetoconductivity
1Mismatch lattice
1Multijunction structure
1Nanostructured materials
1Nitrogen additions
1Optical absorption
1P n junction
1Phonon dispersion relations
1Phonon spectra
1Plasmon phonon interaction
1Preparation
1Quantum dots
1Quantum well lasers
1Reflectivity
1Selenium
1Semiconductor growth
1Semiconductor quantum wells
1Semiconductor quantum wires
1Semiconductor thin films
1Solid-solid interfaces
1Specific heat
1Spin orbit interaction

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