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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « V. P. Konyaev »
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V. P. Kochereshko < V. P. Konyaev < V. P. Kuznetsov  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 10.
Ident.Authors (with country if any)Title
000157 (2009) High-power laser diodes based on triple integrated InGaAs/AlGaAs/GaAs structures emitting at 0.9 μm
000213 (2008) Double integrated nanostructures for pulsed 0.9-μm laser diodes
000828 (2002) High-power semiconductor 0.89-1.06-μm lasers with a low emission divergence based on strained quantum-well InGaAs/(Al)GaAs structures
000A42 (2000-10) Anomalous Dispersion, Differential Gain, and Dispersion of the α-Factor in InGaAs/AlGaAs/GaAs Strained Quantum-Well Semiconductor Lasers
000B57 (2000) Optical loss in strained quantum-well semiconductor ridge lasers
000B90 (2000) Experimental study of the α-factor in InGaAs/AlGaAs/GaAs strained quantum-well lasers
000C04 (2000) Brightness and filamentation of a beam from powerful cw quantum-well In0.2Ga0.8As/GaAs lasers
000D61 (1999) Powerful AlGaAs/InGaAs/GaAs-based diode lasers with a wavelength of 1.06 μm and a reduced divergence in the plane perpendicular to the p - n junction
000F63 (1998) Dynamics of the optical damage of output mirrors of ridge semiconductor lasers based on strained quantum-well heterostructures
001512 (1993) Superluminescent diodes for visible (670 nm) spectral range based on AlGaInP/GaInP heterostructures with tapered grounded absorber

List of associated KwdEn.i

Nombre de
documents		Descripteur
8Semiconductor lasers
7Experimental study
7Gallium arsenides
7Laser diodes
7Ternary compounds
6Binary compounds
6Indium arsenides
6Quantum well lasers
5Aluminium arsenides
4Heterostructures
4Infrared laser
3Output power
3Strained quantum well
2Aluminium Arsenides
2Beam profiles
2Gallium Arsenides
2High-power lasers
2IV characteristic
2Indium Arsenides
2VPE
2p n junctions
1Aluminium Gallium Indium Phosphides Mixed
1Aluminium compounds
1Amplified spontaneous emission
1Beam brightness
1Divergences
1Emission spectra
1Far field
1Filamentation
1Gain measurement
1Gallium Indium Phosphides Mixed
1Heterojunction
1Heterojunctions
1III-V semiconductors
1Indium compounds
1Infrared radiation
1Injection current
1Intensity distribution
1Laser mirrors
1Light current characteristics
1Light emitting diode
1Luminous intensity current characteristic
1MOCVD
1MOVPE method
1Nanostructures
1Optical dispersion
1Optical losses
1Optical scattering
1Radiation damage
1Refractive index
1Ridge waveguides
1Spectral data
1Stability
1Temperature dependence
1Transverse mode
1ns range

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