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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « V. P. Evtikhiev »
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V. P. Duraev < V. P. Evtikhiev < V. P. Gavrilov  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 20.
Ident.Authors (with country if any)Title
000431 (2004-01-05) Time-resolved photoluminescence measurements of InAs self-assembled quantum dots grown on misorientated substrates
000587 (2003-01-01) Voltage distributions and nonoptical catastrophic mirror degradation in high power InGaAs/AlGaAs/GaAs lasers studied by Kelvin probe force microscopy
000628 (2003) Non-linear power-current characteristics of quantum well lasers at high injection
000700 (2002-12-15) Spectroscopic studies of random telegraph noise in InAs quantum dots in GaAs
000771 (2002-02) Atomic Force Microscopy of InAs Quantum Dots on the Vicinal Surface of a GaAs Crystal
000774 (2002-01) Light Emission by Semiconductor Structure with Quantum Well and Array of Quantum Dots
000805 (2002) Observations of self-organized InAs nanoislands on GaAs (0 0 1) surface by electrostatic force microscopy
000846 (2002) Control of density, size and size uniformity of MBE-grown InAs quantum dots by means of substrate misorientation
000920 (2001-03) An Active Lasing Region with a Quantum Well and a Quantum Dot Array
000956 (2001) Photoluminescence decay time measurements from self-organized InAs/GaAs quantum dots grown on misoriented substrates
000A35 (2000-11) The Power Density Giving Rise to Optical Degradation of Mirrors in InGaAs/AlGaAs/GaAs-Based Laser Diodes
000C52 (1999-09) Photoluminescence of InAs quantum dots grown on disoriented GaAs substrates
000D44 (1999) Ultrahigh vacuum scanning tunnelling microscopy studies of the decapped InAs quantum dots on GaAs(001) surface after desorption of a protective As layer
000E01 (1999) Effect of GaAs(001) surface misorientation on the emission from MBE grown InAs quantum dots
000E09 (1999) Characteristics of the InAs quantum dots MBE grown on the vicinal GaAs(0 0 1) surfaces misoriented to the [010] direction
000E23 (1998-12) Continuous stimulated emission at T=293 K from separate-confinement heterostructure diode lasers with one layer of InAs quantum dots grown on vicinal GaAs(001) surfaces misoriented in the [010] direction in the active region
000E60 (1998-07) Growth of InAs quantum dots on vicinal GaAs(001) surfaces misoriented in the [010] direction
000E80 (1998-05) Effect of substrate misorientation on quantum-dot size distribution in the InAs/GaAs system
001E77 (1984)
001E93 (1984)

List of associated KwdEn.i

Nombre de
documents		Descripteur
14Experimental study
13Gallium arsenides
11Indium compounds
8III-V semiconductors
7Indium arsenides
7Semiconductor quantum dots
6Molecular beam epitaxy
6Photoluminescence
6Quantum dots
5Binary compounds
5Quantum well lasers
4Atomic force microscopy
4Semiconductor materials
3Semiconductor lasers
3Substrates
3Theoretical study
2Arsenic compounds
2Double heterojunction
2Excitons
2Gallium Indium Arsenides phosphides Mixed
2Laser mirrors
2Self organization
2Semiconductor growth
2Semiconductor laser
2Semiconductor quantum wells
2Surface structure
2Time resolved spectra
2Vicinal surface
1Adatoms
1Aluminium compounds
1Arrays
1Band bending
1Binary compound
1Capacitive coupling
1Charge injection
1Contact potential
1Crystal growth from vapors
1Density
1Desorption
1Diffusion
1Dimension spectrum
1Electric potential
1Electroluminescence
1Electronic properties
1Electrostatic force
1Energy levels
1Epitaxy
1Excited states
1Film growth
1Force microscopy
1Ground states
1Growth mechanism
1Heterojunctions
1IV characteristic
1Image processing
1Injection laser
1Interface states
1Island structure
1Lifetime
1Line widths
1Liquid phase
1Luminescence decay
1Luminous intensity current characteristic
1Magneto-optical effects
1Monte Carlo method
1Nanostructures
1Non contact measurement
1Optical gain
1Orientation
1Overlayers
1Process control
1Quantum dot
1Quantum wells
1Radiative lifetimes
1Radiative recombination
1Random noise
1Resonant tunnelling
1STM
1Scanning tunneling spectroscopy
1Semiconductor epitaxial layers
1Semiconductor heterojunctions
1Spontaneous emission
1Step
1Stimulated emission
1Surface potential
1Surface topography
1Ternary compounds
1Thermal annealing
1Threshold current
1Tunnel effect
1Wetting

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