V. N. Peleshko < V. N. Petrov < V. N. Petryakov

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 22.
[0-20] [0 - 20][0 - 22][20-21][20-40]

Ident.	Authors (with country if any)	Title
000595 (2003)		The influence of temperature and hydrostatic pressure on luminescence spectra of InAs/GaAs quantum dots
000955 (2001)		Photoluminescence emission (1.3-1.4 μm) from quantum dots heterostructures based on GaAs
000983 (2001)		Incorporation of InAs nanostructures in a silicon matrix : growth, structure and optical properties
000A36 (2000-11)		The Emission from the Structures with Arrays of Coupled Quantum Dots Grown by the Submonolayer Epitaxy in the Spectral Range of 1.3-1.4 μm
000A45 (2000-09-20)		Nanostructured InSiAs Solid Solution Grown by Molecular Beam Epitaxy on the Si(001) Surface
000A59 (2000-07)		Study of Multilayer Structures with InAs Nanoobjects in a Silicon Matrix
000A62 (2000-07)		Photoluminescence from Multilayer InAs/GaAs Structures with Quantum Dots in the 1.3-1.4 μm Wavelength Range
000A82 (2000-05-08)		Structure and optical properties of Si/InAs/Si layers grown by molecular beam epitaxy on Si substrate
000A89 (2000-05)		Multilayer Structures with Quantum Dots in the InAs/GaAs System Emitting at a Wavelength of 1.3 μm
000A91 (2000-05)		A Computerized Complex for Recording and Processing of Reflected High-Energy Electron Diffraction Patterns
000A96 (2000-04)		Recombination Emission from InAs Quantum Dots Grown on Vicinal GaAs Surfaces
000C56 (1999-09)		Heteroepitaxial growth of InAs on Si: a new type of quantum dot
000C85 (1999-06)		Self-organization of quantum dots in multilayer InAs/GaAs and InGaAs/GaAs structures in submonolayer epitaxy
000F07 (1998-01)		Formation of InAs quantum dots in a GaAs matrix during growth on misoriented substrates
000F52 (1998)		Formation of InAs quantum dots on a silicon (100) surface
000F98 (1997-10)		A RHEED study of the transition from two-dimensional to three-dimensional growth in the InAs/GaAs system
001011 (1997-08)		Luminescence properties of InAs/GaAs quantum dots prepared by submonolayer migration-stimulated epitaxy
001013 (1997-08)		Formation of InGaAs/GaAs nanostructures by submonolayer deposition from molecular beams
001126 (1997)		Effect of growth kinetics on the InAs/GaAs quantum dot arrays formation on vicinal surfaces
001232 (1996)		STM and RHEED study of InAs/GaAs quantum dots obtained by submonolayer epitaxial techniques
001305 (1995-07)		Luminescence properties of InAs quantum dots on vicinal GaAs(100) surface

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List of associated KwdEn.i

Nombre de documents	Descripteur
22	Experimental study
15	Molecular beam epitaxy
14	Gallium arsenides
13	Indium compounds
11	Photoluminescence
10	III-V semiconductors
9	Quantum dots
8	Indium arsenides
8	Semiconductor quantum dots
6	STM
6	Semiconductor growth
5	Semiconductor materials
4	Arsenic compounds
4	Binary compounds
4	Nanostructured materials
4	RHEED
4	Semiconductor heterojunctions
3	Semiconductor epitaxial layers
3	Silicon
3	TEM
2	Crystal growth
2	Crystal growth from vapors
2	Epitaxial layers
2	Epitaxy
2	Excitons
2	Island structure
2	Morphology
2	Multilayers
2	Surface structure
2	Theoretical study
1	Activation energy
1	Annealing
1	Arsenic
1	Band structure
1	Chemical interdiffusion
1	Computer aided analysis
1	Computerized instrumentation
1	Crystal orientation
1	Electron diffraction
1	Electron diffraction crystallography
1	Electron-hole recombination
1	Elemental semiconductors
1	Fabrication structure relation
1	Heteroepitaxy
1	Heterojunctions
1	Heterostructures
1	Hydrostatic pressure
1	Indium
1	Instrumentation
1	Interface states
1	Interface structure
1	Kinetics
1	Luminescence
1	Luminescence quenching
1	Measuring methods
1	Multilayer
1	Multiple quantum well
1	Nanostructures
1	Nanotechnology
1	Optical properties
1	Optimization
1	Quantum wires
1	Recording
1	Signal processing
1	Solid clusters
1	Solid solutions
1	Surface topography
1	Temperature dependence
1	Ternary compounds
1	VPE

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