V. M. Sternin < V. M. Ustinov < V. M. Zelenkovskii

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 220.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000074 (2011)		MOVPE of device-oriented wide-band-gap III-N heterostructures
000189 (2008)		Quantum dot photonics : edge emitter, amplifier and VCSEL
000219 (2008)		A 1.33 μm InAs/GaAs quantum dot laser with a 46 cm-1 modal gain
000223 (2007)		The impact of thermal effects on the performance of vertical-cavity surface-emitting lasers based on sub-monolayer InGaAs quantum dots
000241 (2007)		MBE-grown metamorphic lasers for applications at telecom wavelengths
000244 (2007)		Interband light absorption and pauli blocking in InAs/GaAs quantum dots covered by InGaAs quantum wells
000266 (2007)		Charging and spin-polarization effects in InAs quantum dots under bipolar carrier injection
000281 (2006)		Superluminescent InAs/AlGaAs/GaAs quantum dot heterostructure diodes emitting in the 1100-1230-nm spectral range
000314 (2006)		Intraband light absorption in InAs/GaAs quantum dots covered with InGaAs quantum wells
000326 (2006)		Comparative study of GaAs-based 1.5 micron-range InAs/InGaAs and InAs/InAlAs self-assembled quantum dots
000331 (2006)		1.3-1.5 μm quantum dot lasers on foreign substrates : Growth using defect reduction technique, high-power CW operation, and degradation resistance
000334 (2005)		Ultrahigh gain and non-radiative recombination channels in 1.5 μm range metamorphic InAs-InGaAs quantum dot lasers on GaAs substrates
000348 (2005)		QD lasers : Physics and applications
000349 (2005)		Properties of InGaAsN heterostructures emitting at 1.3-1.55 μm
000355 (2005)		Optical spin polarization in double charged InAs self-assembled quantum dots
000356 (2005)		Optical spin polarization and exchange interaction in doubly charged InAs self-assembled quantum dots
000367 (2005)		Long-wavelength lasers based on metamorphic quantum dots
000372 (2005)		High-power 1.3μm InAs/GaInAs/GaAs QD lasers grown in a multiwafer MBE production system
000374 (2005)		High power temperature-insensitive 1.3 μm InAs/InGaAs/GaAs quantum dot lasers
000399 (2004-06)		Spectroscopy of Exciton States of InAs Quantum Molecules
000401 (2004-06)		High-Power 1.5 μm InAs-InGaAs Quantum Dot Lasers on GaAs Substrates

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List of associated KwdEn.i

Nombre de documents	Descripteur
177	Experimental study
174	Gallium arsenides
104	Photoluminescence
98	Indium compounds
97	Indium arsenides
76	Quantum dots
70	III-V semiconductors
69	Semiconductor quantum dots
68	Molecular beam epitaxy
46	Binary compounds
40	Semiconductor lasers
37	Semiconductor materials
37	Ternary compounds
25	Excitons
23	Theoretical study
22	Current density
20	Quantum well lasers
20	Threshold current
19	Aluminium compounds
18	TEM
15	Aluminium arsenides
15	Heterostructures
15	Temperature dependence
14	Electroluminescence
14	Ground states
14	Interface states
14	Self organization
13	Island structure
13	Quantum wells
13	Semiconductor growth
13	Semiconductor heterojunctions
12	Arsenic compounds
11	Crystal growth from vapors
11	Laser diodes
11	Localized states
11	Output power
11	Semiconductor quantum wells
10	Excited states
10	Infrared laser
10	Optical properties
10	Transmission electron microscopy
9	Quantum dot
9	Self-assembled layers
9	Vertical cavity laser
8	Binary compound
8	Monolayers
8	Nanostructured materials
8	Nitrogen compounds
8	Surface emitting lasers
7	Injection laser
7	Optical pumping
7	Quantum dot lasers
7	Semiconductor epitaxial layers
7	Silicon
7	XRD
6	Electronic structure
6	Energy-level transitions
6	Inorganic compounds
6	Nanostructures
6	Strains
6	Time resolved spectra
5	Ambient temperature
5	Band structure
5	DLTS
5	Energy gap
5	Epitaxial layers
5	Epitaxy
5	Growth mechanism
5	Heteroepitaxy
5	Indium Arsenides
5	Interface structure
5	Microcavity
5	Multilayers
5	Quantum yield
5	Quaternary compounds
5	RHEED
5	Semiconductor laser arrays
5	Spin polarization
5	Superlattices
5	Temperature
5	Temperature effects
5	self-assembly
4	Arrays
4	Binding energy
4	Capacitance
4	Circular polarization
4	Density
4	Energy levels
4	Excitation spectrum
4	Gallium Arsenides
4	Gallium compounds
4	Gallium nitrides
4	Heterojunctions
4	Indium nitrides
4	Magnetic field effects
4	Schottky barriers
4	Self-assembly
4	Semiconductor superlattices
4	Ternary compound
4	quantum dot lasers

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