IndiumV3, Russie, Analysis, indexItem, Author.i, V. M. Lantratov

V. M. Lakeenkov < V. M. Lantratov < V. M. Lebedev

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 13.

Ident.	Authors (with country if any)	Title
000120 (2010)		Edge-emitting InGaAs/GaAs laser with high temperature stability of wavelength and threshold current
000126 (2010)		Band structure at heterojunction interfaces of GaInP solar cells
000154 (2009)		III-phosphides heterojunction solar cell interface properties from admittance spectroscopy
000194 (2008)		Numerical modelling of GaInP solar cells with AlInP and AlGaAs windows
000196 (2008)		New method for interface characterization in heterojunction solar cells based on diffusion capacitance measurements
000870 (2001-10)		Study of Electron Capture by Quantum Dots Using Deep-Level Transient Spectroscopy
000914 (2001-03)		Record Power Characteristics of InGaAs/AlGaAs/GaAs Heterostructure Lasers
000917 (2001-03)		InGaAs Nanodomains Formed in situ on the Surface of (Al,Ga)As
000933 (2001)		The influence of Coulomb effects on the electron emission and capture in InGaAs/GaAs self-assembled quantum dots
000B17 (2000-02)		Thermal Annealing of Defects in InGaAs/GaAs Heterostructures with Three-Dimensional Islands
000B81 (2000)		Improved catastrophic optical mirror damage level in InGaAs/AlGaAs laser diodes
000C11 (2000)		1.3 μm luminescence and gain from defect-free InGaAs-GaAs quantum dots grown by metal-organic chemical vapour deposition
001030 (1997-06)		Sulfide passivation of GaSb/GaInAsSb/GaAlAsSb photodiode heterostructures

List of associated KwdEn.i

Nombre de documents	Descripteur
9	Experimental study
8	Gallium arsenides
5	Indium compounds
4	Annealing
4	Solar cell
3	Aluminium compounds
3	Band offset
3	CVD
3	Gallium phosphide
3	Heterojunction
3	Indium phosphide
3	Interface properties
3	Potential barrier
3	Quantum dots
3	Semiconductor lasers
3	Ternary compounds
2	Band structure
2	Binary compounds
2	Capacitance
2	DLTS
2	Defect states
2	Dislocations
2	Heterostructures
2	III-V semiconductors
2	Indium arsenides
2	Localized states
2	Numerical simulation
2	Optical waveguides
2	Photoluminescence
2	Semiconductor heterojunctions
2	Semiconductor materials
1	Activation energy
1	Admittance
1	Aluminium Gallium Arsenides Mixed
1	Aluminium arsenides
1	Aluminium phosphide
1	Amorphous hydrogenated material
1	Arsenic compounds
1	Barrier height
1	Capacitance measurement
1	Carrier density
1	Charge carrier trapping
1	Coatings
1	Continuous wave lasers
1	Coulomb interaction
1	Crystal defects
1	Current density
1	Current voltage characteristics
1	Damaging
1	Dark conductivity
1	Deep level
1	Defect density
1	Diffusion
1	Double layers
1	Electric admittance
1	Electrical conductivity
1	Electron capture
1	Electron emission
1	Electrostatic potential
1	Experimental data
1	Gain
1	Gallium Arsenides
1	Gallium Indium Phosphides Mixed
1	Gallium compounds
1	Heterointerface
1	High temperature
1	III-V compound
1	Indium Arsenides
1	Interface
1	Interface defect
1	Interface electron state
1	Interface state
1	Ionization
1	Island structure
1	Laser mirrors
1	Majority carrier
1	Measuring methods
1	Mirrors
1	Nanostructured materials
1	Optical power density
1	Passivation
1	Photodiodes
1	Photoelectronic properties
1	Photovoltaic cell
1	Quantum wells
1	Quaternary compound
1	Self-adjusting systems
1	Self-assembled layers
1	Semiconducting aluminum compounds
1	Semiconducting indium gallium arsenide
1	Semiconductor quantum dots
1	Silicon
1	Spreading resistance
1	Sulfur
1	TEM
1	Ternary compound
1	Theoretical study
1	Theory
1	Threshold current
1	Valence band

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List of bibliographic references

List of associated KwdEn.i

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Pour mettre un lien sur cette page dans le réseau Wicri

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Index « Auteurs » - entrée « V. M. Lantratov »