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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « V. M. Glazov »
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V. M. Garamus < V. M. Glazov < V. M. Gryaznov  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 14.
Ident.Authors (with country if any)Title
000931 (2001) Thermal expansion of gallium and indium phosphides: Thermodynamic evaluation
000B36 (2000) Thermal expansion and heat capacity of GaAs and InAs
000B79 (2000) InSb-InAs alloys prepared by rapid quenching (106-108 K/s)
000E83 (1998-04) Thermal expansion and characteristic features of the strength of interatomic bonds in melts of III-V compounds (AlSb, GaSb, InSb, GaAs, InAs)
001077 (1997) The anomalous temperature dependence of the heat capacity of molten InSb in the vicinity of the melting temperature
001507 (1993) The electronic component of the entropy of fusion of semiconductors
001710 (1992) Calculations of charge transfer in molten binary systems
001A24 (1989)
001B24 (1988)
001B25 (1988)
001C47 (1987)
001E08 (1985)
001E74 (1984)
001E75 (1984)

List of associated KwdEn.i

Nombre de
documents		Descripteur
8Experimental study
6Liquid state
5Semiconductor materials
4Indium Antimonides
3Indium
3Thermal expansion
3Ultrasound
2Debye temperature
2Gallium
2Gallium Antimonides
2Gallium arsenides
2Germanium
2III-V semiconductors
2Inorganic compound
2Melting
2Specific heat
2Tellurium
2Temperature
2Theoretical study
2Thermodynamic properties
2Wave absorption
2Wave propagation
1Acoustic method
1Acoustical wave
1Aluminium Antimonides
1Aluminium III Antimonides
1Aluminium compounds
1Analytical method
1Anomaly
1Antimony
1Antimony Alloys
1Binary alloys
1Binary compound
1Binary compounds
1Binary mixture
1Binary system
1Cadmium
1Charge carrier concentration
1Charge carrier mobility
1Charge transfer
1Chemical bond
1Chemical bonds
1Chemical composition
1Cluster
1Codoping
1Comparative study
1Compressibility
1Concentration effect
1Crystal growth from melts
1Crystalline structure
1Damping
1Demixtion
1Diffusion
1Donor acceptor interaction
1Effective mass
1Electrical conductivity
1Electrical properties
1Electron mobility
1Electronic component
1Energy gap
1Entropy
1Gallium III Antimonides
1Gallium Tellurides
1Gallium compounds
1Gallium phosphides
1Growth mechanism
1Hall effect
1Hardness
1Heat capacity
1Heterogeneity
1Impurity
1Impurity density
1Indium Alloys
1Indium Antimonides arsenides
1Indium III Antimonides
1Indium Tellurides
1Indium arsenides
1Indium compounds
1Indium phosphides
1Ionic conduction
1Lattice parameters
1Liquid alloy
1Liquid semiconductors
1Liquid state quenching
1Liquid state structure
1Liquid structure
1Mechanical properties
1Medium effect
1Melting points
1Melts
1Microhardness
1Molten phase
1Optimization
1Propagation velocity
1Rapid process
1Selenium
1Silicon
1Solid electrolyte
1Solid solutions
1Solid state

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