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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « V. M. Daniltsev »
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V. M. Burlakov < V. M. Daniltsev < V. M. Fetisova  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 7.
Ident.Authors (with country if any)Title
000651 (2003) InGaAsN/GaAs QD and QW structures grown by MOVPE
000876 (2001-10) A New Method for Determining the Sharpness of InGaAs/GaAs Heterojunctions by Auger Depth Profiling
000922 (2001-02) Subnanometer Resolution in Depth Profiling Using Glancing Auger Electrons
000928 (2001) X-ray optical scheme for diffraction study of semiconductor quantum wells and quantum dots
000A24 (2000-12-15) Low-field negative magnetoresistance in double-layer structures
000A95 (2000-04) Single-Crystalline GaAs, AlGaAs, and InGaAs Layers Grown by Metalorganic VPE on Porous GaAs Substrates
000F09 (1998-01) Characterization of GaAs/ InxGa1-xAs quantum-dot heterostructures by electrical and optical methods

List of associated KwdEn.i

Nombre de
documents		Descripteur
6Experimental study
6Gallium arsenides
5Indium compounds
4III-V semiconductors
2Auger electron spectra
2Crystal growth from vapors
2Photoluminescence
2Quantum wells
2Semiconductor quantum dots
2VPE
1Aluminium compounds
1Chemical beam epitaxy
1Chemical structure
1Composition effect
1Excitons
1Experiments
1Gallium nitrides
1Growth mechanism
1High angular resolution
1Indium arsenides
1Indium nitrides
1Interface states
1Low pressure
1MOVPE method
1Magnetoresistance
1Measuring methods
1Multiple quantum well
1Pseudomorphic growth
1Quantum dots
1Quantum interference phenomena
1Semiconducting gallium arsenide
1Semiconducting indium gallium arsenide
1Semiconductor heterojunctions
1Semiconductor junctions
1Semiconductor quantum wells
1Semiconductor thin films
1Sensitivity
1Spatial distribution
1Sputter deposition
1Surface charging
1Surface segregation
1Thin films
1Uniformity
1X ray diffraction analysis
1X ray optics
1porous semiconductors
1weak localisation

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