Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « V. I. Proshin »
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V. I. Popolitov < V. I. Proshin < V. I. Punegov  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 16.
Ident.Authors (with country if any)Title
000A51 (2000-08-20) Variable-Range-Hopping Conduction via Indium Impurity States in Pb0.78Sn0.22Te Solid Solution
000A58 (2000-07) Superconductivity of In-Doped Sn0.62Pb0.33Ge0.05Te Alloys
000E34 (1998-10) Effect of In doping on the kinetic coefficients in solid solutions of the system (PbzSn1-z)0.95Ge0.05Te
000E91 (1998-03) Transport phenomena in the solid solution (Pb0.78Sn0.22)0.97In0.03Te in the hopping conduction region
001137 (1996-12) Thermoelectric power and activation energy for hopping conductivity in Pb0.78Sn0.22Te solid solutions with high In content
001138 (1996-12) Seebeck coefficient and electron energy band in (Pb0.78Sn0.22)0.97In0.03Te solid solutions with additional doping in the range of the hopping conductivity
001173 (1996-07) Influence of quasilocal states of In on defect formation in PbTe
001208 (1996-02) Effect of In additions on the electrical properties of Sn0.8Ge0.2Te thin films obtained by laser sputtering
001276 (1995-11) Superconducting and electrophysical properties of thin-films of Sn1-zGezTe:In solid solutions
001279 (1995-11) Effect of addition of Ge on the distribution of components and the superconducting transition in Sn1-zPbzTe: In films
001298 (1995-08) Hopping conduction via highly localized impurity states of indium in Pb0.78Sn0.22Te solid solutions
001502 (1993) Transport phenomena in Pb0.78Sn0.22Te with high in impurity concentrations
001576 (1993) Electrical properties of (Sn0.8Ge0.2)1-xInxTe films formed by a laser-evaporation method
001624 (1992) Self-compensation of electrically active impurities by intrinsic defects in Pb0.8Sn0.2Te solid solutions
001803 (1991) Indium impurity states in Pb1-xSnxSe solid solutions
001842 (1991) Characteristics of compensation of the doping effect of donor impurities by vacancies in Pb0.93Sn0.07Se

List of associated KwdEn.i

Nombre de
documents
Descripteur
13Experimental study
7Hall effect
6Indium
5Indium additions
5Solid solutions
5Theoretical study
4Inorganic compound
4Seebeck effect
4Tin tellurides
3Charge carrier concentration
3Chemical composition
3Chlorine
3Electric conductivity
3Electrical conductivity
3Impurity density
3Lead tellurides
3Semiconductor materials
3Temperature
2Activation energy
2Compensation
2Germanium tellurides
2Hopping conduction
2IV-VI semiconductors
2Impurity
2Lead alloys
2Lead compounds
2Localized states
2Superconducting films
2Tellurium alloys
2Thallium
2Thermoelectric power
2Tin Lead Selenides Mixed
2Tin alloys
2Tin compounds
2Transition temperature
2Vacancy
1Band structure
1Charge compensation
1Critical field
1Crystal defect
1Crystal defect density
1Crystal defects
1Donor center
1Doped materials
1Doping profiles
1Electron lattice interaction
1Energy gap
1Energy level
1Energy-level density
1Germanium alloys
1Germanium compounds
1Hall mobility
1Hole density
1Hopping conductivity
1Impurities
1Impurity level
1Impurity scattering
1Impurity states
1Indium compounds
1Low temperature
1Magnetic field
1Semiconductor doping
1Sodium
1Solid solution
1Stoichiometry
1Superconducting transition temperature
1Thermodynamics
1Thermomagnetic effects
1Thin films
1Tin Germanium Indium Tellurides Mixed
1Tin Indium Lead Tellurides Mixed
1Tin Lead Tellurides Mixed
1Valence bands
1Very low temperature
1Wave functions

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