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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « V. Gergel »
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V. Gavrilyuk < V. Gergel < V. Grivickas  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 4.
Ident.Authors (with country if any)Title
000D74 (1999) Modelling of the current-voltage characteristics of InAs/AlGaSb/GaSb double barrier diodes with interband resonant tunnelling
001000 (1997-09-01) Self-consistent modeling of the current-voltage characteristics of resonant tunneling structures with type II heterojunctions
001230 (1996) Self-consistent calculation of current-voltage characteristics of resonant tunnelling structures with type II heterojunctions
001352 (1995) Resonant tunneling in type II heterostructures

List of associated KwdEn.i

Nombre de
documents		Descripteur
2III-V compound
2Semiconductor quantum wells
2Theoretical study
2Tunnel effect
1Aluminium Antimonides
1Aluminium antimonides
1Aluminium compounds
1Band bending
1Band structure
1Binary compound
1Calculations
1Carrier concentration
1Comparative study
1Computer simulation
1Current
1Current density
1Current voltage characteristics
1Double barrier structure
1Electron state
1Electron tunneling
1Experiments
1Gallium Antimonides
1Gallium compounds
1Hamiltonians
1Heterojunctions
1Heterostructures
1III-V semiconductors
1Indium Arsenides
1Indium arsenides
1Indium compounds
1Interband transition
1Kane model
1Liquid nitrogen
1Mathematical models
1Modeling
1Multilayers
1Peak
1Probability
1Quantum wells
1Resonant tunnel effect
1Resonant tunneling structures
1Room temperature
1SCF calculations
1Self consistent calculation
1Semiconducting aluminum compounds
1Semiconducting indium compounds
1Semiconductor device structures
1Semiconductor diodes
1Semiconductor materials
1Temperature effect
1Ternary compound
1Theory
1Transfer Hamiltonian approach
1Transfer matrix method
1Tunnel diode
1Voltage current curve
1k.p calculations

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