IndiumV3, Russie, Analysis, indexItem, Author.i, V. G. Mokerov

V. G. Melehin < V. G. Mokerov < V. G. Mozhaev

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 16.

Ident.	Authors (with country if any)	Title
000255 (2007)		Electron transport and optical properties of shallow GaAs/InGaAs/GaAs quantum wells with a thin central AlAs barrier
000436 (2004)		X-ray diagnostics of heterostructures with quantum dots
000517 (2003-10)		Electron Transport in Unipolar Heterostructure Transistors with Quantum Dots in Strong Electric Fields
000589 (2003-01)		Lateral Electronic Transport in Short-Period InAs/GaAs Superlattices at the Threshold of Quantum Dot Formation
000655 (2003)		InAs quantum dots in multilayer GaAs-based heterostructures
000802 (2002)		Optical and transport properties of short-period InAs/GaAs superlattices near quantum dot formation
000B16 (2000-02)		Ultraquasi-Hydrodynamic Electron Transport in Submicrometer Field Effect MIS Transistors and Heterotransistors
000C55 (1999-09)		High density 2DEG in III-V semiconductor heterostructures and high-electron-mobility transistors based on them
000E32 (1998-10)		High-electron-mobility field-effect transistors based on metamorphic InAlAs/InGaAs/InAlAs structures grown on GaAs substrates
000E39 (1998-09)		Transport properties and photoluminescence of two-dimensional electron gas in pseudomorphic n-AlGaAs/InGaAs/GaAs quantum wells
000E43 (1998-09)		Photoluminescence of two-dimensional electron gas in metamorphic n-InAlAs/InGaAs/InAlAs heterostructures on GaAs(100) substrates
000F39 (1998)		LM-HEMT and P-HEMT-technology for ultra high frequency devices
001177 (1996-06)		Optical properties of a two-dimensional electron gas in AlGaAs/GaAs heterostructures
001421 (1994-08)		Study of an InGaAs/GaAs(100) heterostructure by high-resolution x-ray diffractometry
001429 (1994-07)		Temperature dependence of the photoluminescence of InxGa1-xAs/GaAs quantum-well structures
001460 (1994-01)		Width of exciton line in the low-temperature photoluminescence of InxGa1-xAs/GaAs structures with single quantum wells

List of associated KwdEn.i

Nombre de documents	Descripteur
12	Gallium arsenides
11	Experimental study
9	Photoluminescence
8	Indium arsenides
7	Indium compounds
6	Molecular beam epitaxy
6	Theoretical study
5	Aluminium compounds
4	Quantum wells
4	Transport processes
3	Arsenic compounds
3	Binary compounds
3	Electron gas
3	Gallium compounds
3	Hall effect
3	Heterostructures
3	Quantum dots
3	Shubnikov-de Haas effect
3	XRD
2	Electrical conductivity
2	Electron mobility
2	Excitons
2	Field effect transistors
2	High-resolution methods
2	III-V semiconductors
2	Magnetoresistance
2	Recombination
2	Semiconductor heterojunctions
2	Semiconductor quantum dots
2	Silicon additions
2	Subband
2	Temperature dependence
2	Ternary compounds
1	Aluminium Arsenides
1	Aluminium arsenides
1	Atomic force microscopy
1	Band structure
1	Binary compound
1	Carrier density
1	Carrier mobility
1	Doping
1	Electric field effects
1	Electron density
1	Formation mechanism
1	Gallium Arsenides
1	High electron mobility transistor
1	High electron mobility transistors
1	Hydrodynamics
1	Indium Arsenides
1	Interface structure
1	MIS structures
1	Magnetic field effects
1	Metallic conduction
1	Multilayers
1	Optical properties
1	Ordering
1	Oscillations
1	Performance characteristic
1	Reflectivity
1	Semiconductor epitaxial layers
1	Semiconductor materials
1	Semiconductor quantum wells
1	Semiconductor superlattices
1	Superlattices
1	Temperature range 13-65 K
1	Ternary compound
1	Thickness
1	Thin films
1	Two-dimensional electron gas
1	Ultrathin films
1	Unijunction transistors
1	Visible spectra
1	Wave functions
1	Wetting

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List of bibliographic references

List of associated KwdEn.i

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