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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « V. G. Lifshits »
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V. G. Kytin < V. G. Lifshits < V. G. Litovchenko  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 20.
Ident.Authors (with country if any)Title
000445 (2004) Surfactant mediated growth of Sb clusters on Si(111) surface
000463 (2004) Modification of Sb/Si(001) interface by incorporation of In(4 x 3) surface reconstruction
000534 (2003-07-11) Doping of Magic Nanoclusters in the Submonolayer In/Si(100) System
000601 (2003) Study of Sb adsorption on the Si(0 0 1)-In(4 x 3) surface
000C01 (2000) Composition and atomic structure of the Si(111)√31 × √31-In surface
000C28 (1999-11-15) Analysis of surface structures through determination of their composition using STM: Si(100)4×3-In and Si(111)4×1-In reconstructions
000E71 (1998-05-15) Structural model for the Si(100)4×3-In surface phase
000F17 (1998) The role of Si atoms in In/Si(111) surface phase formation
000F33 (1998) New structural model for the Si(111)4 x 1-In reconstruction
000F99 (1997-09-15) STM tip-induced diffusion of In atoms on the Si(111)×-In surface
001015 (1997-07-15) Structural model for the Si(111)-4×1-In reconstruction
001053 (1997-02-15) Indium-induced Si(111)4×1 silicon substrate atom reconstruction
001084 (1997) Structural transformations at room temperature adsorption of In on Si(111)√3 x √3-In surface : LEED-AES-STM study
001089 (1997) Si(100)4 x 3-in surface phase : identification of silicon substrate atom reconstruction
001094 (1997) Rapid and high concentrated permeation of Ga into InSb
001130 (1997) Coadsorption of Ag and In atoms on Si(111) surface
001135 (1997) 4 x 1-Si substrate atoms reconstruction in the Si(111)4 x 1-In structure
001573 (1993) Electrophysical properties of surface phases of In on Si(111)
001598 (1992) Thin gold and indium films on Si(111) surface
001948 (1989) The role of surface phases in processes on silicon surfaces

List of associated KwdEn.i

Nombre de
documents		Descripteur
17Experimental study
17Silicon
16Indium
12Surface structure
9STM
9Surface reconstruction
5Elemental semiconductors
5LEED
3AES
3Adsorption
3Adsorption structure
3Annealing
3Antimony
3Auger electron spectrometry
3Gas solid interface
3RHEED
3Semiconductor materials
3Surface phase transformations
3Theoretical study
2Chemical bonds
2Diffusion
2Gas solid adsorption
2Hydrogen
2Interface structure
2LEED diffraction
2Scanning tunneling microscopy
2Semiconductor-metal boundaries
2Structural models
1Ab initio calculations
1Activation energy
1Adsorbed layers
1Adsorption site
1Atomic force microscopy
1Auger effect
1Auger electron spectroscopy
1Chemisorption
1Cluster
1Coadsorption
1Coverage rate
1Crystal face
1Crystal growth
1Deposition
1Desorption
1Diffusion coefficient
1EEL spectroscopy
1Electric conductivity
1Electrodiffusion
1Electron spectroscopy
1Epitaxial layers
1Film growth
1Gold
1Honeycomb structures
1Indium additions
1Indium antimonides
1Inorganic adsorbent
1Island structure
1Kinetics
1LPE
1Magnetoresistance
1Metallic adsorbate
1Metallic adsorbent
1Monolayers
1Nanostructured materials
1Permeation
1Phase transformations
1Physical method
1Point defects
1Preadsorption
1Semiconductor superlattices
1Silver
1Stacking faults
1Stacking sequence
1Substrates
1Surface
1Surface diffusion
1Surface properties
1Surface topography measurement
1Surfactants
1Temperature dependence
1Temperature effect
1Temperature effects
1Temperature range 0000-0013 K
1Temperature range 0013-0065 K
1Temperature range 0065-0273 K
1Thin film
1Thin films
1Total energy
1Trigonal lattices
1surface composition

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