Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « V. E. Tokranov »
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V. E. Tezlevan < V. E. Tokranov < V. E. Umanskij  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 9.
Ident.Authors (with country if any)Title
000846 (2002) Control of density, size and size uniformity of MBE-grown InAs quantum dots by means of substrate misorientation
000939 (2001) Step bunching in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on GaAs(001) vicinal surfaces
000C52 (1999-09) Photoluminescence of InAs quantum dots grown on disoriented GaAs substrates
000D44 (1999) Ultrahigh vacuum scanning tunnelling microscopy studies of the decapped InAs quantum dots on GaAs(001) surface after desorption of a protective As layer
000E01 (1999) Effect of GaAs(001) surface misorientation on the emission from MBE grown InAs quantum dots
000E09 (1999) Characteristics of the InAs quantum dots MBE grown on the vicinal GaAs(0 0 1) surfaces misoriented to the [010] direction
000E23 (1998-12) Continuous stimulated emission at T=293 K from separate-confinement heterostructure diode lasers with one layer of InAs quantum dots grown on vicinal GaAs(001) surfaces misoriented in the [010] direction in the active region
000E60 (1998-07) Growth of InAs quantum dots on vicinal GaAs(001) surfaces misoriented in the [010] direction
000E80 (1998-05) Effect of substrate misorientation on quantum-dot size distribution in the InAs/GaAs system

List of associated KwdEn.i

Nombre de
documents
Descripteur
8Experimental study
5Gallium arsenides
5III-V semiconductors
5Indium arsenides
5Molecular beam epitaxy
4Indium compounds
4Photoluminescence
4Semiconductor quantum dots
4Substrates
3Quantum dots
3Semiconductor materials
3Vicinal surface
2Atomic force microscopy
2Binary compounds
2Crystal growth from vapors
2Semiconductor growth
2Step
2Surface structure
1Adatoms
1Band bending
1Binary compound
1Density
1Desorption
1Dimension spectrum
1Electroluminescence
1Electronic properties
1Epitaxial layers
1Excitons
1Growth mechanism
1Heterojunctions
1IV characteristic
1Line widths
1Magneto-optical effects
1Monte Carlo method
1Orientation
1Overlayers
1Process control
1Quantum dot
1Quantum well lasers
1Quantum wells
1STM
1Scanning tunneling spectroscopy
1Self organization
1Semiconductor epitaxial layers
1Semiconductor lasers
1Stimulated emission
1TEM
1Theoretical study
1Thermal annealing
1Thin films

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