Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « V. A. Vekshin »
Attention, ce site est en cours de développement !
Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.
V. A. Vasil Ev < V. A. Vekshin < V. A. Vilkotskii  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 11.
Ident.Authors (with country if any)Title
000415 (2004-03-19) Mie Resonances, Infrared Emission, and the Band Gap of InN
000454 (2004) Plasma-assisted MBE growth and characterization of InN on sapphire
000464 (2004) Mie resonances, infrared emission, and the band gap of InN
000619 (2003) Photoluminescence and Raman study of hexagonal InN and In-rich InGaN alloys
000690 (2003) Band gap of hexagonal InN and InGaN alloys
000849 (2002) Band gap of hexagonal InN and InGaN alloys
000899 (2001-05) X-ray Diffractometric Study of the Influence of a Buffer Layer on the Microstructure of Molecular-Beam Epitaxial InN Layers of Different Thicknesses
000947 (2001) Radiation-induced defects in n-type GaN and InN
000954 (2001) Physical properties of InN with the band gap energy of 1.1 eV
000B84 (2000) Hexagonal InN/sapphire heterostructures: interplay of interface and layer properties
000C26 (1999-11-22) Experimental and theoretical studies of phonons in hexagonal InN

List of associated KwdEn.i

Nombre de
documents
Descripteur
11Experimental study
8Indium nitrides
5III-V semiconductors
5Photoluminescence
4Absorption spectra
4Annealing
4Binary compounds
4Energy gap
4Gallium nitrides
4Hexagonal lattices
4Semiconductor materials
3Cathodoluminescence
3Epitaxial layers
3Indium compounds
3Mie scattering
3Molecular beam epitaxy
3Raman spectra
3Ternary compounds
2Carrier density
2Doping
2Infrared spectra
2Light scattering
2Monocrystals
2XRD
1Absorption edge
1Aluminium oxides
1Anomaly
1Atomic clusters
1Carrier mobility
1Charge compensation
1Chemical composition
1Composition effect
1Crystal growth from vapors
1Debye temperature
1Dislocations
1Doped materials
1Electrical conductivity
1Excitation spectrum
1Growth mechanism
1Heterostructures
1Interfaces
1Interfacial layer
1Irradiation defect
1Magnesium additions
1Magnetic field effects
1Metal clusters
1Microstructure
1Narrow band gap semiconductors
1Nitrogen compounds
1Nonstoichiometry
1Optical absorption
1Optical constants
1Phonon dispersion relations
1Phonon spectra
1Photoreflectance
1Physical radiation effects
1Plasma assisted processing
1Plasmon phonon interaction
1Precipitates
1Proton beams
1Reflectance
1Reflectivity
1SIMS
1Semiconductor thin films
1Solid-solid interfaces
1Specific heat
1Superconducting transition
1TEM
1Temperature dependence
1Wide band gap semiconductors

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Russie/Analysis
HfdIndexSelect -h $EXPLOR_AREA/Data/Russie/Analysis/Author.i -k "V. A. Vekshin" 
HfdIndexSelect -h $EXPLOR_AREA/Data/Russie/Analysis/Author.i  \
                -Sk "V. A. Vekshin" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/Russie/Analysis/biblio.hfd 

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Russie
   |étape=   Analysis
   |type=    indexItem
   |index=    Author.i
   |clé=    V. A. Vekshin
}}

Wicri

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024