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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « V. A. Simakov »
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V. A. Sidorov < V. A. Simakov < V. A. Skripkin  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 5.
Ident.Authors (with country if any)Title
000157 (2009) High-power laser diodes based on triple integrated InGaAs/AlGaAs/GaAs structures emitting at 0.9 μm
000213 (2008) Double integrated nanostructures for pulsed 0.9-μm laser diodes
000828 (2002) High-power semiconductor 0.89-1.06-μm lasers with a low emission divergence based on strained quantum-well InGaAs/(Al)GaAs structures
000A99 (2000-04) Mesastripe Single-Mode Separately Bounded Lasers Based on InGaAsP/InP Heterostructures Obtained by VPE of Organometallic Compounds
000B09 (2000-03) Separately Bounded InGaAsP High-Power Laser Heterostructures Obtained by VPE of Organometallic Compounds

List of associated KwdEn.i

Nombre de
documents		Descripteur
4VPE
3Experimental study
3Heterostructures
3Semiconductor lasers
3Ternary compounds
2Aluminium Arsenides
2Binary compounds
2Gallium Arsenides
2Gallium arsenides
2High-power lasers
2IV characteristic
2Indium Arsenides
2Indium compounds
2Laser diodes
2Output power
2Phosphorus compounds
2Quantum well lasers
1Aluminium arsenides
1Arsenic compounds
1Beam profiles
1Diodes
1Divergences
1Emission spectra
1Fabry-Perot resonators
1Gallium alloys
1III-V semiconductors
1Indium arsenides
1Infrared laser
1Injection current
1Laser accessories
1Lasers
1Luminous intensity current characteristic
1MOCVD
1MOVPE method
1Nanostructures
1Organometallic compounds
1Semiconductor diodes
1Strained quantum well
1Temperature dependence
1ns range
1p n junctions

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