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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « V. A. Shchukin »
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V. A. Shalygin < V. A. Shchukin < V. A. Sheraukhov  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 17.
Ident.Authors (with country if any)Title
000120 (2010) Edge-emitting InGaAs/GaAs laser with high temperature stability of wavelength and threshold current
000241 (2007) MBE-grown metamorphic lasers for applications at telecom wavelengths
000292 (2006) Self-organized formation of shell-like InAs/GaAs quantum dot ensembles
000312 (2006) Longitudinal photonic bandgap crystal laser diodes with ultra-narrow vertical beam divergence
000318 (2006) Formation and evolution of multimodal size distributions of InAs/GaAs quantum dots
000331 (2006) 1.3-1.5 μm quantum dot lasers on foreign substrates : Growth using defect reduction technique, high-power CW operation, and degradation resistance
000348 (2005) QD lasers : Physics and applications
000539 (2003-07) Control over the Parameters of InAs-GaAs Quantum Dot Arrays in the Stranski-Krastanow Growth Mode
000945 (2001) Reversibility of the island shape, volume and density in Stranski-Krastanow growth
000996 (2001) Entropy-driven effects in self-organized formation of quantum dots
000A21 (2000-12-15) Tuning quantum dot properties by activated phase separation of an InGa(Al)As alloy grown on InAs stressors
000C50 (1999-09) Spontaneously assembling periodic composition-modulated InGaAsP structures
000C93 (1999-05) Spontaneously forming periodic composition-modulated InGaAsP structures
000E75 (1998-05) Structural characterization of self-organized nanostructures
001153 (1996-09-15) Direct formation of vertically coupled quantum dots in Stranski-Krastanow growth
001320 (1995-04-15) Tuning and breakdown of faceting under externally applied stress
001811 (1991) Formation of strained superlattices with a macroscopic peroid via spinodal decomposition of III-V semiconductor alloys

List of associated KwdEn.i

Nombre de
documents		Descripteur
14Gallium arsenides
9Indium arsenides
8Experimental study
7III-V semiconductors
6Quantum dots
5Indium compounds
5Photoluminescence
5Theoretical study
4Binary compounds
4Molecular beam epitaxy
4Self organization
4Semiconductor materials
4TEM
3Growth mechanism
3High temperature
3Island structure
3Lattice parameters
3Output power
3Semiconductor lasers
3Semiconductor quantum dots
3Ternary compounds
2Adatoms
2Buffer layer
2Continuous wave
2Current density
2Free energy
2Gallium compounds
2Germanium
2Optical properties
2Optical waveguides
2Quantum yield
2Semiconductor epitaxial layers
2Silicon
2Spinodal decomposition
2Surface structure
2Temperature effects
2Threshold current
1Aging
1Aluminium arsenides
1Aluminium compounds
1Aluminium phosphides
1Ambient temperature
1Arrays
1Beam profiles
1Binary compound
1CVD
1Cooling system
1Crystal growth from vapors
1Damage
1Damaging
1Defect density
1Density
1Digital simulation
1Dimensions
1Distribution functions
1Doped materials
1Durability
1Elasticity
1Electron microscopy
1Entropy
1Epitaxial layers
1Faceting
1Far field
1Filamentation
1Frequency control
1Gallium Arsenides
1Gallium Indium Arsenides phosphides Mixed
1Geometrical shape
1Ground states
1Heat sink
1Heteroepitaxy
1Heterostructures
1III-V compound
1Indium Arsenides
1Inorganic compounds
1Interface states
1Interface structure
1Irreversible processes
1Kinetics
1Laser diodes
1Laser materials
1Lifetime
1Light emitting diodes
1Master equations
1Mirrors
1Modulated structure
1Multilayers
1Nanostructured materials
1Nanostructures
1Narrow band gap semiconductors
1Nonlinear problems
1Optical confinement
1Optical materials
1Optimization method
1Oscillation frequency
1Phase separation
1Phase transformation
1Photonic band gap
1Plastics
1Quantum dot

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