Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « V. A. Kulbachinskii »
Attention, ce site est en cours de développement !
Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.
V. A. Kul Bachinskij < V. A. Kulbachinskii < V. A. Kulbachnskii  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 17.
Ident.Authors (with country if any)Title
000041 (2012) Influence of Sn on the thermoelectric properties of (BixSb1-x)2Te3 single crystals
000234 (2007) Persistent infrared photoconductivity in InAs/GaAs structures with quantum dot layer
000255 (2007) Electron transport and optical properties of shallow GaAs/InGaAs/GaAs quantum wells with a thin central AlAs barrier
000503 (2003-12) Effect of Electron Irradiation on the Galvanomagnetic Properties of InxBi2 - xTe3 Semiconductor Single Crystals
000556 (2003-04) Quantum Hall Effect-Insulator Transition in the InAs / GaAs System with Quantum Dots
000589 (2003-01) Lateral Electronic Transport in Short-Period InAs/GaAs Superlattices at the Threshold of Quantum Dot Formation
000660 (2003) Hopping conductivity and magnetic-field-induced quantum hall-insulator transition in InAs/GaAs quantum dot layers
000802 (2002) Optical and transport properties of short-period InAs/GaAs superlattices near quantum dot formation
000873 (2001-10) Electrical Transport and Persistent Photoconductivity in Quantum Dot Layers in InAs/GaAs Structures
000D18 (1999-03) Photoluminescence and transport properties of multilayer InAs/GaAs structures with quantum dots
000D67 (1999) Peculiarities of optical and low-temperature transport properties of multi-layer InAs/GaAs structures with quantum dots
000F35 (1998) Low temperature transport properties of InAs/GaAs structures with quantum dots
001250 (1996) Electron mobility in selectively doped GaAs/InxGa1-xAs multiple quantum well structures
001283 (1995-10-15) Valence-band changes in Sb2-xInxTe3 and Sb2Te3-ySey by transport and Shubnikov-de Haas effect measurements
001483 (1994) Influence of intercalation on the electrophysical properties of layered semiconductors Bi2Te3 and InSe
001490 (1994) Electrophysical properties of p- and n-type InSe intercalated with Li and Ba
001629 (1992) Pressure spectroscopy of impurity states and band structure of bismuth telluride

List of associated KwdEn.i

Nombre de
documents
Descripteur
12Experimental study
10Gallium arsenides
9Shubnikov-de Haas effect
8Hall effect
8Magnetoresistance
8Photoluminescence
7Temperature dependence
6Indium arsenides
5Electrical conductivity
5Indium compounds
5Quantum dots
5Semiconductor materials
5Transport processes
4Binary compounds
3Carrier density
3Carrier mobility
3Electric conductivity
3Photoconductivity
3Quantum Hall effect
3Quantum wells
3Semiconductor quantum dots
2Atomic force microscopy
2Barium compounds
2Doping
2Electron density
2Electron localization
2Hopping conduction
2Indium selenides
2Intercalation compounds
2Lithium compounds
2Low temperature
2Magnetooscillatory properties
2Oscillations
2Shubnikov de Haas effect
2Subband
2Thermoelectric properties
2Transport properties
2Weak localization
1Aluminium arsenides
1Anisotropy
1Antimony selenides
1Antimony tellurides
1Arsenic compounds
1Band structure
1Binary compound
1Bismuth Tellurides
1Bismuth compounds
1Bismuth tellurides
1Charge carrier trapping
1Crystal defects
1Doped materials
1Effective mass
1Electron beam effects
1Electron mobility
1Electron transfer
1Electron traps
1Electron-impurity interactions
1Electronic structure
1Fermi level
1Gallium Arsenides
1Hole density
1III-V compound
1III-V semiconductors
1Illumination
1Impurity
1Impurity ionization
1Impurity scattering
1Indium
1Indium Arsenides
1Indium additions
1Indium tellurides
1Infrared radiation
1Inorganic compound
1Integrated circuit
1Interface structure
1Magnetic field
1Magnetic field effects
1Metal-insulator transition
1Metallic conduction
1Microelectronic fabrication
1Molecular beam epitaxy
1Monocrystals
1Mott transition
1Multilayers
1N-type conductors
1Optical polarization
1Optical properties
1P type conductivity
1P-type conductors
1Pressure
1Quantum dot
1Radiation effects
1Random potential
1Relaxation time
1Scattering
1Seebeck effect
1Semiconductor alloys
1Semiconductor superlattices
1Silicon additions
1Solid solutions

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Russie/Analysis
HfdIndexSelect -h $EXPLOR_AREA/Data/Russie/Analysis/Author.i -k "V. A. Kulbachinskii" 
HfdIndexSelect -h $EXPLOR_AREA/Data/Russie/Analysis/Author.i  \
                -Sk "V. A. Kulbachinskii" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/Russie/Analysis/biblio.hfd 

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Russie
   |étape=   Analysis
   |type=    indexItem
   |index=    Author.i
   |clé=    V. A. Kulbachinskii
}}

Wicri

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024