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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « V. A. Kapitonov »
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V. A. Kaigorodov < V. A. Kapitonov < V. A. Karasyuk  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 16.
Ident.Authors (with country if any)Title
000366 (2005) Manifestation of the equilibrium hole distribution in photoluminescence of n-InN
000391 (2005) Acceptor states in the photoluminescence spectra of n-InN
000500 (2003-12) MOCVD GaInAsP/GaInP/AlGaInP Laser Structures Emitting at 780 nm
000520 (2003-09) Optical and Structural Properties of InGaAsP Miscibility-Gap Solid Solutions Grown by MOVPE on GaAs(001) Substrates
000662 (2003) High power lasers based on submonolayer InAs-GaAs quantum dots and InGaAs quantum wells
000688 (2003) Comparison of carbon and zinc p-clad doped LP MOCVD grown InGaAs/AlGaAs low divergence high-power laser heterostructures
000721 (2002-09) MOCVD-Grown InGaAs/GaAs/AlGaAs Laser Structures with a Broad-Area Contact
000866 (2001-11) MOCVD-Grown Broad Area InGaAs/GaAs/InGaP Laser Diodes
000914 (2001-03) Record Power Characteristics of InGaAs/AlGaAs/GaAs Heterostructure Lasers
000923 (2001-02) Optical Study of InP Quantum Dots
000A38 (2000-11) Epitaxial Deposition of InGaAsP Solid Solutions in the Miscibility Gap
000B10 (2000-03) Photoluminescent and Electroluminescent Properties of Spontaneously Forming Periodic InGaAsP Structures
000C50 (1999-09) Spontaneously assembling periodic composition-modulated InGaAsP structures
000C74 (1999-07) Self-organized nanoscale InP islands in an InGaP/GaAs host and InAs islands in an InGaAs/InP host
000C93 (1999-05) Spontaneously forming periodic composition-modulated InGaAsP structures
000E66 (1998-06) Self-organizing nanoheterostructures in InGaAsP solid solutions

List of associated KwdEn.i

Nombre de
documents		Descripteur
14Experimental study
12Gallium arsenides
12Indium compounds
9Photoluminescence
7III-V semiconductors
7Semiconductor lasers
4Lattice parameters
4MOCVD
4Semiconductor epitaxial layers
3Aluminium compounds
3Gallium compounds
3Phosphorus compounds
3Semiconductor heterojunctions
3Solid solutions
3Theoretical study
2Carrier density
2Charge carrier trapping
2Effective mass
2Indium arsenides
2Indium nitrides
2Laser diodes
2Molecular beam epitaxy
2Spinodal decomposition
2VPE
1Absorption spectra
1Acceptor center
1Aluminium arsenides
1Binary compounds
1CVD
1Carbon additions
1Charge carrier recombination
1Continuous phase modulation
1Crystal doping
1Crystal growth from vapors
1Crystal microstructure
1Crystal structure
1Degenerate state
1Diodes
1Doping profiles
1Electroluminescence
1Energy gap
1Energy relaxation
1Excitation spectrum
1Fabrication property relation
1Free carrier
1Free electron
1Heterojunctions
1High-power lasers
1Inorganic compounds
1Interband transitions
1Island structure
1LPE
1Laser mirrors
1Localized states
1Luminous intensity current characteristic
1Microelectronic fabrication
1Nanostructured materials
1Operating mode
1Optical losses
1Output power
1Precursor
1Quantity ratio
1Quantum dots
1Quantum well lasers
1Quantum yield
1Semiconductor materials
1Semiconductor quantum dots
1Shallow level
1Stoichiometry
1Surface structure
1TEM
1Ternary compounds
1Thin films
1Transmission electron microscopy
1Urbach rule
1Waveguides
1XRD
1Zinc additions
1self-assembly
1self-organised criticality

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