V. A. Dubeiko < V. A. Egorov < V. A. Elizarov

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 24.
[0-20] [0 - 20][0 - 24][20-23][20-40]

Ident.	Authors (with country if any)	Title
000244 (2007)		Interband light absorption and pauli blocking in InAs/GaAs quantum dots covered by InGaAs quantum wells
000314 (2006)		Intraband light absorption in InAs/GaAs quantum dots covered with InGaAs quantum wells
000399 (2004-06)		Spectroscopy of Exciton States of InAs Quantum Molecules
000411 (2004-04)		The Effect of Exposure to Arsenic Flow on the Optical Properties of Quantum Dot Arrays in the InAs/GaAs(100) System
000421 (2004-03)		Dependence of Structural and Optical Properties of QD Arrays in an InAs/GaAs System on Surface Temperature and Growth Rate
000485 (2004)		Effect of growth kinetics on the structural and optical properties of quantum dot ensembles
000499 (2003-12)		Room-Temperature 1.5-1.6 μm Photoluminescence from InGaAs/GaAs Heterostructures Grown at Low Substrate Temperature
000526 (2003-08)		Quantum Dots in InAs Layers of Subcritical Thickness on GaAs(100)
000536 (2003-07)		Theoretical and Experimental Study of the Effect of InAs Growth Rate on the Properties of QD Arrays in InAs/GaAs System
000551 (2003-05)		Structural and Optical Properties of InAs Quantum Dots in AlGaAs Matrix
000640 (2003)		Light absorption and emission in InAs/GaAs quantum dots and stepped quantum wells
000642 (2003)		Investigation of the formation of InAs QD's in a AlGaAs matrix
000747 (2002-05)		Photoluminescence in the 1.55 μm Wavelength Range in the InGaAs/GaAs System with Quantum Dots and Wells
000763 (2002-03)		Effect of the Growth Parameters on the Electron Structure of Quantum Dots in InGaAs/GaAs Heterostructures
000789 (2002)		Stoichiometry and absolute atomic concentration profiles obtained by combined Rutherford backscattering spectroscopy and secondary-ion mass spectroscopy: InAs nanocrystals in Si
000795 (2002)		Photoluminescence of isolated quantum dots in metastable InAs arrays
000955 (2001)		Photoluminescence emission (1.3-1.4 μm) from quantum dots heterostructures based on GaAs
000983 (2001)		Incorporation of InAs nanostructures in a silicon matrix : growth, structure and optical properties
000A36 (2000-11)		The Emission from the Structures with Arrays of Coupled Quantum Dots Grown by the Submonolayer Epitaxy in the Spectral Range of 1.3-1.4 μm
000A45 (2000-09-20)		Nanostructured InSiAs Solid Solution Grown by Molecular Beam Epitaxy on the Si(001) Surface
000A59 (2000-07)		Study of Multilayer Structures with InAs Nanoobjects in a Silicon Matrix

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List of associated KwdEn.i

Nombre de documents	Descripteur
22	Experimental study
18	Photoluminescence
16	Gallium arsenides
14	Indium compounds
12	Molecular beam epitaxy
12	Quantum dots
9	Indium arsenides
7	Arsenic compounds
7	Semiconductor quantum dots
6	Semiconductor heterojunctions
5	III-V semiconductors
5	Quantum wells
4	Excitons
4	Semiconductor materials
4	Silicon
3	Arrays
3	Binary compounds
3	Crystal growth from vapors
3	Nanostructured materials
3	Nanostructures
3	TEM
3	Theoretical study
3	Transmission electron microscopy
2	Absorption spectra
2	Epitaxial layers
2	Interband transitions
2	Intraband transitions
2	Island structure
2	Matrix elements
2	Multilayers
2	Optical pumping
2	Polarized radiation
2	RHEED
2	Semiconductor epitaxial layers
2	Size effect
2	Surface structure
1	Absorption coefficients
1	Activation energy
1	Aluminium arsenides
1	Annealing
1	Arrhenius equation
1	Arsenic
1	Atomic force microscopy
1	Band offset
1	Buried nanostructure
1	Characterization
1	Chemical interdiffusion
1	Composite materials
1	Density
1	Depth profiles
1	Elastic deformation
1	Electron diffraction
1	Electronic structure
1	Elemental semiconductors
1	Energy gap
1	Epitaxy
1	Excitation spectrum
1	Excited states
1	Germanium
1	Growth mechanism
1	Growth rate
1	Heteroepitaxy
1	Heterojunctions
1	Heterostructures
1	Illumination
1	Indium
1	Infrared spectra
1	Integrated intensity
1	Interface structure
1	Kinetics
1	Line widths
1	Localization
1	Localized states
1	Luminescence
1	Mid infrared radiation
1	Monolayers
1	Multilayer
1	Multiple quantum well
1	Nanocrystal
1	Nonstoichiometry
1	Optical amplification
1	Optical properties
1	Population inversion
1	Positron annihilation
1	RBS
1	SIMS
1	STM
1	Schottky barriers
1	Selective excitation
1	Semiconductor quantum wells
1	Solid solutions
1	Temperature
1	Temperature dependence
1	Ternary compounds
1	Tunnel effect

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