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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « T. S. Shamirzaev »
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T. S. Papina < T. S. Shamirzaev < T. S. Tabarov  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 8.
Ident.Authors (with country if any)Title
000030 (2012) Submicron Raman and photoluminescence topography of InAs/Al(Ga)As quantum dots structures
000080 (2011) High-quality structures with InAs/Al0.9Ga0.1As QDs produced by droplet epitaxy
000095 (2010) Semiconductor Nanostructures Modified by the UV Laser Radiation
000284 (2006) Strong sensitivity of photoluminescence of InAs/AlAs quantum dots to defects : evidence for lateral inter-dot transport
000297 (2006) Prolonged decay of free-to-bound photoluminescence in direct band gap InGaAs and AlGaAs alloys : magnetic resonance studies
000340 (2005) Spin lifetime from Hanle-effect measurements in samples with InAs quantum dots embedded in different AlxGa1-xAs matrices
000555 (2003-04-10) Millisecond Photoluminescence Kinetics in a System of Direct-Bandgap InAs Quantum Dots in an AlAs Matrix
000681 (2003) Effect of the low-temperature heating on formation and evolution of defects in PHEMT AlGaAs/InGaAs structures exposed by CF4 plasma

List of associated KwdEn.i

Nombre de
documents		Descripteur
6Indium arsenides
6Photoluminescence
5Aluminium arsenides
5Gallium arsenides
4Energy gap
4Quantum dots
4Ternary compounds
3Excitons
3III-V semiconductors
3Semiconductor materials
2Defect density
2Experimental study
2Inorganic compounds
2Interdiffusion
2Lifetime
2Luminescence decay
2Molecular beam epitaxy
2Nanostructures
2Self-assembled layers
1Acceptor center
1Annealing
1Arsenic compounds
1Bilayers
1Binary compounds
1Blue shift
1Charge carrier recombination
1Charge carrier trapping
1Charge carriers
1Circular polarization
1Defect formation
1Depth profiles
1Donor center
1Droplet epitaxy
1Elastic deformation
1Electron emission
1Electron hole pair
1Electron interaction
1Electronic structure
1Energy transfer
1Excimer lasers
1Experimental design
1Film growth
1Gallium Arsenides
1Gas lasers
1Growth defect
1Growth mechanism
1Heat treatments
1Heterointerface
1Heterojunctions
1III-V compound
1Indium Arsenides
1Indium compounds
1Interfaces
1Laser irradiation
1Magnetic field effects
1Magnetic resonance
1Nanomaterial synthesis
1Non radiative recombination
1Optical phonons
1Optical properties
1Phonon spectra
1Physical radiation effects
1Plasma assisted processing
1Polarized radiation
1Quantum wells
1RHEED
1Raman scattering
1Resonance Raman scattering
1Sandwich structures
1Scanning transmission electron microscopy
1Selective excitation
1Shallow level
1Spectral line shift
1Spin polarization
1Strains
1Surface topography
1Temperature effects
1Theoretical study
1Thickness
1Time resolved spectra
1Ultraviolet laser
1Wettability
1Wetting
1g-factor
1ns range

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HfdIndexSelect -h $EXPLOR_AREA/Data/Russie/Analysis/Author.i  \
                -Sk "T. S. Shamirzaev" \
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