Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « T. N. Danilova »
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T. Maruyama < T. N. Danilova < T. N. Fursova  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 22.
[0-20] [0 - 20][0 - 22][20-21][20-40]
Ident.Authors (with country if any)Title
000711 (2002-11) Flattening of Dynamic Dielectric Phase Grating and Single-Mode Lasing under the Conditions of Transverse Oscillations of Luminous Flux
000862 (2001-12) InAsSb/InAsSbP Double-Heterostructure Lasers Emitting in the 3-4 μm Spectral Range
000A37 (2000-11) InAsSb/InAsSbP Double-Heterostructure Lasers Emitting at 3-4 μm: Part I
000A43 (2000-09-20) Tunable InAsSb/InAsSbP Laser with a Low Radiation Divergence in the p-n-Junction Plane
000C41 (1999-10) InAsSb/InAsSbP heterostructure lasers with a large range of current tuning of the lasing frequency
000C51 (1999-09) Short-wavelength current tuning of InAsSb/InAsSbP heterostructure lasers caused by an injection nonuniformity
000C63 (1999-08) Spatial beam oscillations in stripe lasers utilizing InAsSb/InAsSbP heterojunctions
000D17 (1999-03) Suppression of Auger recombination in diode lasers utilizing InAsSb/InAsSbP and InAs/GaInAsSb type-II heterojunctions
000D24 (1999-02) Rapid tuning of the generation frequency of InAsSb/InAsSbP diode lasers (λ=3.3μm) due to nonlinear optical effects
000D29 (1999-02) High-power light-emitting diodes operating in the 1.9 to 2.1-μm spectral range
000E92 (1998-03) Spatial distribution of the radiation in the far zone of InAsSb/InAsSbP mesastrip lasers as a function of current
000F00 (1998-02) InAsSbP double-heterostructure lasers for the spectral range 2.7-3.0 μm (T=77 K)
000F54 (1998) Fast tuning of 3.3 μm InAsSb/InAsSbP diode lasers using nonlinear optical effects
000F88 (1997-11) Current tuning of the emission wavelength of low-threshold mesa stripe lasers utilizing InAsSb/InAsSbP double heterostructures and emitting in the vicinity of 3.3μm
001012 (1997-08) InAsSb/InAsSbP diode lasers with separate electrical and optical confinement, emitting at 3-4 μm
001033 (1997-06) Influence of charge carriers on tuning in InAsSb lasers
001159 (1996-08) Using current to tune the wavelength of InAsSb/InAsSbP double-heterostructure lasers
001171 (1996-07) Maximum working temperature of InAsSb/InAsSbP diode lasers
001172 (1996-07) Lasing inhomogeneities in buried channel lasers with a p-GaInAsSb active region
001292 (1995-09) Polarization of the emission from double-heterostructure lasers based on InAsSb/InAsSbP
001647 (1992) Nature of the long-wavelength shift of the spectrum of coherent radiation emitted from GalnAsSb heterolasers

List of associated KwdEn.i

Nombre de
documents
Descripteur
18Semiconductor lasers
17Experimental study
15Indium compounds
10III-V semiconductors
6Laser tuning
5Semiconductor heterojunctions
4Antimony compounds
4Arsenic compounds
3Carrier density
3Indium antimonides
3Indium arsenides
3LPE
3Theoretical study
2Auger effect
2Current density
2Electron-hole recombination
2Gallium arsenides
2Gallium compounds
2Indium phosphides
2Laser modes
2Laser radiation
2Nonlinear optics
2Reviews
2Semiconductor laser
2Spectral shift
1Aluminium compounds
1Diodes
1Double heterojunction
1Electric currents
1Emission spectrum
1Fabrication
1Gallium Indium Antimonides Arsenides Mixed
1Gallium Indium Antimonides arsenides Mixed
1Gallium antimonides
1Heterojunction
1Heterojunctions
1Indium Antimonides
1Indium Arsenides
1Indium Phosphides
1Infrared laser
1Injection laser
1Instrumentation
1Laser cavities
1Laser frequency stability
1Laser theory
1Light emitting diodes
1Molecular beam epitaxy
1Operation
1Optical polarization
1Performance characteristic
1Phosphorus compounds
1Polarization
1Quantum well
1Quaternary compounds
1Recombination
1Refractive index
1Semiconductor device models
1Semiconductor epitaxial layers
1Semiconductor growth
1Spectroscopy
1Temperature
1Temperature control
1Temperature dependence
1Temperature range
1Ternary compounds
1Thermalization
1Tuning
1Wide band gap semiconductors
1charge injection
1p n heterojunctions
1p n junctions

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