T. I. Olkhovikova < T. I. Voronina < T. I. Zahar Yash

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 23.
[0-20] [0 - 20][0 - 23][20-22][20-40]

Ident.	Authors (with country if any)	Title
000183 (2008)		Type II GaAsxSb1-x/InAs (x<0.35) heterojunction grown by MOVPE near a miscibility gap of the ternary solid solution
000404 (2004-05)		MOCVD Growth and Mg-Doping of InAs Layers
000529 (2003-08)		Interaction of Charge Carriers with the Localized Magnetic Moments of Manganese Atoms in p-GaInAsSb/p-InAs:Mn Heterostructures
000532 (2003-08)		Characterization of Light-Emitting Diodes Based on InAsSbP/InAsSb Structures Grown by Metal-Organic Vapor-Phase Epitaxy
000731 (2002-08)		Influence of Tellurium Impurity on the Properties of Ga1 - XInXAsYSb1 - Y (X > 0.22) Solid Solutions
000888 (2001-08)		The Role of Lead in Growing Ga1 - XInXAsYSb1 - Y Solid Solutions by Liquid-Phase Epitaxy
000913 (2001-03)		Type II Heterojunctions in an InGaAsSb/GaSb System: Magnetotransport Properties
000B21 (2000-02)		Magnetotransport in a Semimetal Channel in p-Ga1 - xInxAsySb1 - y / p-InAs Heterostructures with Various Compositions of the Solid Solution
000C39 (1999-10)		Luminescence properties of InAs layers and p-n structures grown by metallorganic chemical vapor deposition
000C81 (1999-07)		Electrical properties of epitaxial indium arsenide and narrow band solid solutions based on it
000D21 (1999-03)		Bistability of electroluminescence in a type-II AlGaAsSb/InGaAsSb double heterostructure
000E96 (1998-03)		Electrical properties of GaSb-based solid solutions (GaInAsSb, GaAlSb, GaAlAsSb) and their compositional dependence
000F01 (1998-02)		Depletion of the inverse electron channel at the type-II heterojunction in the system p-GaInAsSb/p-InAs
000F59 (1998)		Electron channel with high carrier mobility at the interface of type-II broken-gap p-GaInAsSb/p-InAs single heterojunctions
001014 (1997-08)		Electronic transport in a type-II GaInAsSb/p-InAs heterojunction with different doping levels of the solid solution
001178 (1996-06)		High carrier mobility in p-type GaInAsSb/p-InAs heterostructures
001325 (1995-04)		GaInAsSb/InAs heterojunctions
001526 (1993)		Properties of epitaxial indium arsenide doped with rare-earth elements
001559 (1993)		Investigation of the structure of the conduction band of InAsSbP solid solutions
001666 (1992)		Investigation of structure defects in epitaxial indium arsenide films
001825 (1991)		Electrical and photoelectric properties of narrow-gap GaInSbAs:Mn solid solutions

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List of associated KwdEn.i

Nombre de documents	Descripteur
21	Experimental study
13	Indium compounds
11	Gallium arsenides
10	Hall effect
7	Electrical conductivity
7	Magnetoresistance
7	Semiconductor heterojunctions
6	III-V semiconductors
6	Semiconductor materials
6	Solid solutions
5	Antimony compounds
5	Charge carrier concentration
5	Indium arsenides
5	LPE
4	Carrier mobility
4	Charge carrier mobility
4	Gallium compounds
4	Impurity states
4	Low temperature
4	Photoconductivity
4	Temperature
3	Acceptor center
3	Arsenic compounds
3	Electroluminescence
3	Electron mobility
3	Energy gap
3	Epitaxial layers
3	Heterojunctions
3	Impurity density
3	Indium antimonides
3	Inorganic compound
3	Light emitting diodes
3	Photoluminescence
3	Semiconductor doping
3	Tellurium
2	Aluminium compounds
2	Band structure
2	Carrier density
2	Donor center
2	Doping
2	Electric conductivity
2	Gallium Indium Antimonides arsenides Mixed
2	Gallium antimonides
2	Impurity
2	Indium Arsenides
2	Interface phenomena
2	Localized states
2	Magnetoconductivity
2	Manganese
2	N type conductivity
2	Narrow band gap semiconductors
2	Quaternary compounds
2	Shubnikov-de Haas effect
2	Tellurium additions
2	Theoretical study
2	VPE
1	Binary compounds
1	CVD
1	Cadmium
1	Charge carrier scattering
1	Chemical composition
1	Composition effect
1	Conduction bands
1	Critical phenomenon
1	Deep energy levels
1	Defect level
1	Defect states
1	Doped materials
1	Doping profiles
1	Effective mass
1	Epitaxial film
1	Exchange interactions (electron)
1	Fabrication
1	Gadolinium
1	Gallium Antimonides arsenides
1	Gallium Arsenides
1	Gallium phosphide
1	Galvanomagnetic effect
1	Galvanomagnetic effects
1	Germanium
1	Growth from liquid
1	Hall mobility
1	Heterostructures
1	III-V compound
1	Impurities
1	Impurity conductivity
1	Impurity level
1	Indium Antimonides arsenides
1	Indium Phosphides
1	Indium phosphides
1	Landau levels
1	Lead
1	MOCVD
1	MOVPE method
1	Magnesium
1	Magnetic field effects
1	Magnetic moments
1	Magnetooscillatory properties
1	Metal insulator transition
1	Miscibility

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