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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « T. A. Polyanskaya »
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T. A. Orkvasov < T. A. Polyanskaya < T. A. Pozdynakova  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 14.
Ident.Authors (with country if any)Title
000480 (2004) Electron phase and spin decoherence in the vicinity of the second subband edge in an asymmetrical quantum well
000702 (2002-12) Weak Antilocalization and Spin-Orbit Interaction in a In0.53Ga0.47As/InP Quantum Well in the Persistent Photoconductivity State
000D83 (1999) Interaction of low-density 2DEG with acoustic phonons
000E38 (1998-09) Weak-field magnetoresistance of two-dimensional electrons in In0.53Ga0.47As/InP heterostructures in the persistent photoconductivity regime
000F20 (1998) Spin-orbit splitting and weak antilocalization in an asymmetric In0.53Ga0.47As/InP quantum well
001041 (1997-04) Spin relaxation and weak localization of two-dimensional electrons in asymmetric quantum wells
001308 (1995-07) Determination of the properties of the 2D electron gas in InGaAs/InP structures by acoustic methods under the conditions of the quantum Hall effect
001358 (1995) Quantum transport effects in a two-dimensional electron gas as a tool for the investigation of heterointerfaces
001462 (1994-01) Shubnikov-de Hass oscillations in a nonuniform 2D electron gas
001523 (1993) Quantum and classical relaxation times and properties of a heterojunction in selectively doped InP/In0.53Ga0.47As heterostructures
001B20 (1988)
001B22 (1988)
001E18 (1985)
001E94 (1984)

List of associated KwdEn.i

Nombre de
documents		Descripteur
11Experimental study
9Gallium arsenides
6Electron gas
6Indium arsenides
6Indium phosphides
6Magnetoresistance
4Binary compounds
4Heterojunction
4III-V semiconductors
4Indium Phosphides
4Semiconductor materials
4Semiconductor quantum wells
4Ternary compounds
4Two-dimensional electron gas
3Doping
3Gallium Indium Arsenides Mixed
3Heterostructures
3Indium compounds
3Inorganic compound
3Magnetoconductivity
3Two-dimensional systems
2Aluminium Gallium Arsenides Mixed
2Epitaxy
2Gallium Arsenides
2Hall effect
2Photoconductivity
2Theoretical study
2Thin film
1Acoustic measurements
1Acoustic surface waves
1Charge carrier concentration
1Charge carrier mobility
1Charge carrier scattering
1Concentration ratio
1Coulomb scattering
1Crystal growth
1Damping
1Defect
1Doped materials
1Electric conductivity
1Electrical conductivity
1Electron density
1Electron temperature
1Electron-phonon interactions
1Fermi level
1Films
1Fluctuations
1Gallium Indium Arsenides phosphides Mixed
1Gallium Indium Phosphides Mixed
1Galvanomagnetic effect
1Growth from liquid
1Heteroepitaxy
1Heterogeneity
1Inhomogeneity
1Interface
1Interfaces
1L-S coupling
1Landau level
1Lanthanide
1Liquid phase epitaxy
1Liquid state
1Localized electron
1Localized states
1MHz range
1Magnetooscillatory properties
1Mobility
1Molecular beam condensation
1Negative magnetoconductivity
1Numerical solution
1Phosphorus compounds
1Preparation
1Quantum Hall effect
1Quantum coherence
1Quantum interference phenomena
1Quantum magnetic field
1Quantum transport
1Quantum wells
1Relaxation time
1Scattering
1Screening
1Semiconductor heterojunctions
1Shubnikov de Haas effect
1Shubnikov-de Haas effect
1Spin orbit interaction
1Spin-orbit interactions
1Subband
1Temperature dependence
1Temperature range 0-13 K

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