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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « S. Yu. Karpov »
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S. Yu. Ermakov < S. Yu. Karpov < S. Yu. Melchakov  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 10.
Ident.Authors (with country if any)Title
000060 (2011) Strain effects on indium incorporation and optical transitions in green-light InGaN heterostructures of different orientations
000329 (2006) Analytical model for the quantum-confined Stark effect including electric field screening by non-equilibrium carriers
000822 (2002) Indium segregation kinetics in MOVPE of InGaN-based heterostructures
000937 (2001) Surface segregation in group-III nitride MBE
000965 (2001) On low temperature kinetic effects in metal-organic vapor phase epitaxy of III-V compounds
000B78 (2000) Indium segregation kinetics in InGaAs ternary compounds
000D84 (1999) Indium droplet formation during molecular beam epitaxy of InGaN
001219 (1996) Thermal etching of binary and ternary III-V compounds under vacuum conditions
001261 (1996) Conditions of excess liquid phase formation during molecular beam epitaxy of III-V ternary compounds
001398 (1995) Analysis of V-group molecules sticking to III-V compound surfaces

List of associated KwdEn.i

Nombre de
documents		Descripteur
8III-V semiconductors
7Theoretical study
5Gallium arsenides
5Gallium nitrides
4Crystal growth from vapors
4Indium arsenides
4Indium nitrides
4Molecular beam epitaxy
4Surface segregation
4Ternary compounds
3Binary compounds
3Heterostructures
3Kinetics
3Operating mode
3Quantum wells
3Thin films
2Aluminium arsenides
2Epitaxial layers
2Gas solid adsorption
2MOVPE method
2Modelling
2Models
2Rate equation
2Semiconductor materials
2Temperature dependence
2Thermodynamic analysis
1Activation energy
1Aluminium nitrides
1Analytical method
1Arsenic Molecules
1Chemical composition
1Crystal growth
1Crystal orientation
1Depth profiles
1Desorption
1Dimers
1Droplets
1Elastic deformation
1Electric field effects
1Energy gap
1Energy levels
1Etching
1Experimental study
1Gallium Indium Nitrides Mixed
1Gallium nitride
1Growth rate
1Heat treatments
1Heterojunctions
1Inclination
1Indium phosphides
1Kinetic model
1Laser beams
1Limiting factor
1Liquid phase
1Low temperature
1Mass transfer
1Mismatch lattice
1Optical transition
1Optimization
1Perturbation theory
1Photoluminescence
1Physisorption
1Plasma sources
1Quantum confined Stark effect
1Reflectometry
1Screening
1Self consistency
1Sticking coefficient
1Strained layer
1Stress relaxation
1Surface reactions
1Surface reconstruction
1Surface treatments
1Temperature
1Tetramer
1VPE
1Vacuum annealing

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