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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « S. V. Sorokin »
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S. V. Smorodinov < S. V. Sorokin < S. V. Sorokina  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 9.
Ident.Authors (with country if any)Title
000170 (2009) Compact green laser converter with injection pumping, based on MBE grown II-VI nanostructures
000397 (2004-06-07) Asymmetric AlAsSb/InAs/CdMgSe quantum wells grown by molecular-beam epitaxy
000472 (2004) InAs/Zn(Mn)Te/Cd(Mn)Se pseudomorphic quantum well structures for spintronic applications
000545 (2003-06) Mid-Infrared (λ = 2.775 μm) Injection Laser Based on AlGaAsSb/InAs/CdMgSe Hybrid Double Heterostructure Grown by Molecular-Beam Epitaxy
000547 (2003-05-26) A 2.78-μm laser diode based on hybrid AlGaAsSb/InAs/CdMgSe double heterostructure grown by molecular-beam epitaxy
000810 (2002) Molecular beam epitaxy of low-strained CdSe/CdMgSe heterostructures on InAs(001) substrates
000907 (2001-04) Structural, Luminescent, and Transport Properties of Hybrid AlAsSb/InAs/Cd(Mg)Se Heterostructures Grown by Molecular Beam Epitaxy
000B60 (2000) Novel approach to the calculation of instability regions in GaInAsSb alloys
000D63 (1999) Plasma-assisted MBE growth of GaN and InGaN on different substrates

List of associated KwdEn.i

Nombre de
documents		Descripteur
7Molecular beam epitaxy
6Experimental study
5Cadmium compounds
5Indium compounds
5Photoluminescence
4Aluminium compounds
3Cadmium selenides
3Heterostructures
3II-VI semiconductors
3Semiconductor heterojunctions
3Semiconductor lasers
2Antimony compounds
2Gallium arsenides
2III-V semiconductors
2Indium arsenides
2Magnesium compounds
2Quantum wells
2Selenium compounds
2Semiconductor growth
2Semiconductor materials
2XRD
2Zinc tellurides
1Active layer
1Antimonides arsenides
1Arsenic compounds
1Band structure
1Binary compounds
1Characterization
1Chemical composition
1Crystal growth from vapors
1Crystal structure
1Deformation
1Electron density
1Electron microprobe analysis
1Electron mobility
1Energy gap
1Energy-level splitting
1Epitaxial layers
1External fields
1Gallium compounds
1Gallium nitride
1Gallium nitrides
1III-V compound
1Impurities
1Indium nitride
1Indium nitrides
1Infrared spectra
1Interfaces
1Laser diodes
1Magnesium selenides
1Magnetic field effects
1Manganese additions
1Manganese compounds
1Microlenses
1Miscibility gap
1Mismatch lattice
1Nanostructures
1Optical properties
1Optical pumping
1Passivation
1Phase separation
1Quantity ratio
1Quantum dot lasers
1Quantum yield
1Quaternary compounds
1SIMS
1Semiconductor epitaxial layers
1Semiconductor quantum wells
1Semimagnetic semiconductors
1Shubnikov-de Haas effect
1Spintronics
1Stacking fault density
1Strains
1Superlattices
1Surface preparation
1Ternary compounds
1Theoretical study
1Thermodynamic properties
1Transmission electron microscopy
1Transport processes
1Two-dimensional electron gas
1Waveguides
1Zeeman effect
1Zinc Selenides sulfides
1Zinc selenides

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