Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « S. V. Novikov »
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S. V. Nochevny < S. V. Novikov < S. V. Plaksin  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 27.
[0-20] [0 - 20][0 - 27][20-26][20-40]
Ident.Authors (with country if any)Title
000480 (2004) Electron phase and spin decoherence in the vicinity of the second subband edge in an asymmetrical quantum well
000702 (2002-12) Weak Antilocalization and Spin-Orbit Interaction in a In0.53Ga0.47As/InP Quantum Well in the Persistent Photoconductivity State
000976 (2001) Magnetic field induced insulating phase in two-dimensional electron gas in InGaAs/InP : The Wigner solid
000D83 (1999) Interaction of low-density 2DEG with acoustic phonons
000E38 (1998-09) Weak-field magnetoresistance of two-dimensional electrons in In0.53Ga0.47As/InP heterostructures in the persistent photoconductivity regime
000F20 (1998) Spin-orbit splitting and weak antilocalization in an asymmetric In0.53Ga0.47As/InP quantum well
000F46 (1998) Improvement of the photoluminescence from gallium nitride layers grown by MBE with an additional incident indium flux
001041 (1997-04) Spin relaxation and weak localization of two-dimensional electrons in asymmetric quantum wells
001165 (1996-08) Ellipsometric investigation of epitaxial layers of InGaAs and InAlAs solid solutions isoperiodic with InP
001186 (1996-05) Quenching of persistent photoconductivity by electrical pulses
001187 (1996-05) Molecular beam epitaxy growth kinetics for group III nitrides
001193 (1996-05) Effect of a strong electric field on the properties of a nonequilibrium, two-dimensional electron gas in nonideal heterostructures
001226 (1996) Spin splitting of the Landau levels and exchange interaction of a non-ideal two-dimensional electron gas in InxGa1-xAs/InP heterostructures
001309 (1995-07) Auger electron spectroscopy, x-ray diffraction, and scanning electron microscopy of InN, GaN, and Ga(AsN) films on GaP and GaAs(001) substrates
001358 (1995) Quantum transport effects in a two-dimensional electron gas as a tool for the investigation of heterointerfaces
001452 (1994-02) Relationship between growth conditions and heterojunction quality in InP/In1-xGaxAs selectively doped heterostructures grown by liquid-phase epitaxy
001453 (1994-02) Quantum wires with controllable conducting-channel width based on In0.53Ga0.47As/InP heterostructures
001462 (1994-01) Shubnikov-de Hass oscillations in a nonuniform 2D electron gas
001474 (1994) Quantum wires with the tunable width of conducting channel in In0.53Ga0.47As/InP heterostructures
001523 (1993) Quantum and classical relaxation times and properties of a heterojunction in selectively doped InP/In0.53Ga0.47As heterostructures
001569 (1993) Feasibility of formation of In0.52Al0.48As films isoperiodic with the InP substrates by liquid phase epitaxy at low (∼650°C)

List of associated KwdEn.i

Nombre de
documents
Descripteur
25Experimental study
17Gallium arsenides
14Indium arsenides
12Indium phosphides
11Semiconductor materials
10Electron gas
9Magnetoresistance
8Ternary compounds
7Binary compounds
6Heterostructures
6Inorganic compound
5Photoconductivity
5Two-dimensional electron gas
4Crystal growth
4Doped materials
4Galvanomagnetic effect
4Hall effect
4III-V semiconductors
4Indium compounds
4Molecular beam epitaxy
4Semiconductor quantum wells
4Temperature dependence
4Two-dimensional systems
3Epitaxy
3Growth from liquid
3Heterojunction
3Indium Phosphides
3Solid solution
3Theoretical study
2Aluminium arsenides
2Charge carrier concentration
2Charge carrier mobility
2Charge carrier scattering
2Damping
2Defect
2Doping
2Gallium Arsenides
2Gallium Indium Arsenides Mixed
2Gallium Indium Phosphides Mixed
2Gallium nitrides
2Impurity density
2Liquid phase epitaxy
2Photoluminescence
2Quantum wires
2Shubnikov-de Haas effect
2Solid solutions
2Substrates
2Thin film
2Two dimensional model
1AES
1Activation energy
1Aluminium Gallium Arsenides Mixed
1Arsenides
1Band structure
1Bismuth
1Cathodoluminescence
1Characterization
1Chemical composition
1Concentration ratio
1Coulomb scattering
1Crystal defect density
1Electric conductivity
1Electron density
1Electron mobility
1Electron temperature
1Electron-phonon interactions
1Ellipsometry
1Energy gap
1Energy-level density
1Etching
1Exchange interactions
1Fermi level
1Films
1Fluctuations
1Frequency
1Gallium compounds
1Gallium phosphides
1Helium-Neon lasers
1Heteroepitaxy
1Heterojunctions
1High-frequency discharges
1IV characteristic
1Impurity
1Indium
1Indium Antimonides arsenides
1Indium Antimonides phosphides
1Indium nitrides
1Inhomogeneity
1Inorganic compounds
1Interfaces
1L-S coupling
1LPE
1Landau level
1Landau levels
1Laser radiation
1Localized states
1Magnetic field effects
1Magnetoconductivity
1Magnetooscillatory properties
1Measuring methods

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