S. V. Iordanskii < S. V. Ivanov < S. V. Ivanovo

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 57.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000143 (2009)		On the nature of defect states at interfaces of InAs/AlSb quantum wells
000170 (2009)		Compact green laser converter with injection pumping, based on MBE grown II-VI nanostructures
000182 (2008)		Type II InSb/InAs quantum dot structures grown by molecular beam epitaxy using Sb2 and As2 fluxes
000233 (2007)		Plasma-assisted MBE of InGaN epilayers with atomically smooth and nanocolumnar morphology, grown on MOVPE GaN/Al2O3 templates
000299 (2006)		Plasmonic effects in InN-based structures with nano-clusters of metallic indium
000345 (2005)		Resonant Raman spectroscopy on InN
000357 (2005)		Optical properties of InN with stoichoimetry violation and indium clustering
000358 (2005)		Optical properties of InN related to surface plasmons
000362 (2005)		Molecular beam epitaxy of type II InSb/InAs nanostructures with InSb sub-monolayers
000363 (2005)		Molecular beam epitaxy of AlInAsSb alloys near the miscibility gap boundary
000397 (2004-06-07)		Asymmetric AlAsSb/InAs/CdMgSe quantum wells grown by molecular-beam epitaxy
000415 (2004-03-19)		Mie Resonances, Infrared Emission, and the Band Gap of InN
000454 (2004)		Plasma-assisted MBE growth and characterization of InN on sapphire
000464 (2004)		Mie resonances, infrared emission, and the band gap of InN
000472 (2004)		InAs/Zn(Mn)Te/Cd(Mn)Se pseudomorphic quantum well structures for spintronic applications
000492 (2004)		Comment on: Mie resonances, infrared emission, and the band gap of InN. Authors' reply
000513 (2003-10-13)		Electrically tunable mid-infrared electroluminescence from graded cascade structures
000545 (2003-06)		Mid-Infrared (λ = 2.775 μm) Injection Laser Based on AlGaAsSb/InAs/CdMgSe Hybrid Double Heterostructure Grown by Molecular-Beam Epitaxy
000547 (2003-05-26)		A 2.78-μm laser diode based on hybrid AlGaAsSb/InAs/CdMgSe double heterostructure grown by molecular-beam epitaxy
000619 (2003)		Photoluminescence and Raman study of hexagonal InN and In-rich InGaN alloys
000637 (2003)		MBE growth and photoluminescence properties of strained InAsSb/AlSbAs quantum wells

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List of associated KwdEn.i

Nombre de documents	Descripteur
39	Experimental study
29	Molecular beam epitaxy
25	Photoluminescence
22	III-V semiconductors
19	Indium nitrides
18	Indium compounds
14	Semiconductor materials
12	Binary compounds
11	Crystal growth from vapors
11	Energy gap
11	Indium arsenides
9	Aluminium compounds
9	Quantum wells
8	Epitaxial layers
8	Semiconductor heterojunctions
8	XRD
7	Absorption spectra
7	Aluminium antimonides
7	Cadmium compounds
7	Cyclotron resonance
7	Gallium antimonides
7	Gallium nitrides
7	Heterostructures
7	Infrared spectra
7	Magnetic field effects
7	Optical properties
7	Semiconductor growth
6	Gallium compounds
6	II-VI semiconductors
5	Antimony compounds
5	Electroluminescence
5	Hexagonal lattices
5	Semiconductor quantum wells
5	Ternary compounds
5	Theoretical study
5	Transmission electron microscopy
4	Absorption edge
4	Arsenic compounds
4	Cadmium selenides
4	Gallium arsenides
4	Indium antimonides
4	Mie scattering
4	Monocrystals
4	Raman spectra
4	Semiconductor epitaxial layers
3	Annealing
3	Band structure
3	Cathodoluminescence
3	Doping
3	Gallium Antimonides
3	Growth mechanism
3	III-V compound
3	Indium Arsenides
3	Inorganic compounds
3	Interface states
3	Magnesium compounds
3	Narrow band gap semiconductors
3	Photoconductivity
3	Semiconductor lasers
3	Two-dimensional electron gas
3	Valence bands
2	Absorption coefficients
2	Aluminium oxides
2	Anomaly
2	Arsenic Antimonides
2	Atomic force microscopy
2	Binary compound
2	Chemical composition
2	Crystal structure
2	Electric field effects
2	Electrical conductivity
2	Electron mobility
2	Electronic structure
2	Excitation spectrum
2	Heterojunctions
2	Impurities
2	Infrared radiation
2	Inorganic compound
2	Interface structure
2	Interfaces
2	Island structure
2	Landau levels
2	Light scattering
2	MOVPE method
2	Magnesium additions
2	Magnesium selenides
2	Magnetic field
2	Manganese compounds
2	Nanostructure
2	Nonstoichiometry
2	Operating mode
2	Optical absorption
2	Phase separation
2	Plasma assisted processing
2	Plasma sources
2	Quantum dot
2	Quantum dots
2	Quantum well
2	Quaternary compounds
2	SIMS

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