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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « S. S. Molchanov »
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S. S. Mikrin < S. S. Molchanov < S. S. Murzin  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 7.
Ident.Authors (with country if any)Title
000404 (2004-05) MOCVD Growth and Mg-Doping of InAs Layers
000532 (2003-08) Characterization of Light-Emitting Diodes Based on InAsSbP/InAsSb Structures Grown by Metal-Organic Vapor-Phase Epitaxy
000618 (2003) Powerful InAsSbP/InAsSb light emitting diodes grown by MOVPE
000829 (2002) High-power mid-infrared light emitting diodes grown by MOVPE
000879 (2001-09) InAs/InAsSbP Light-Emitting Structures Grown by Gas-Phase Epitaxy
000A32 (2000-12) Long-wavelength Light-Emitting Diodes (λ = 3.4-3.9 μm) Based on InAsSb/InAs Heterostructures Grown by Vapor-Phase Epitaxy
000C39 (1999-10) Luminescence properties of InAs layers and p-n structures grown by metallorganic chemical vapor deposition

List of associated KwdEn.i

Nombre de
documents		Descripteur
5Arsenic compounds
5Experimental study
5Light emitting diodes
4Indium compounds
4Photoluminescence
3Antimony compounds
3VPE
2CVD
2Electroluminescence
2Epitaxial layers
2Heterojunctions
2Phosphorus compounds
2Semiconductor heterojunctions
1Cross sectional transmission electron microscopy
1Electric currents
1Electrical conductivity
1Energy gap
1Experiments
1Indium alloys
1Indium antimonides
1Indium arsenides
1Indium phosphide
1Joule heating
1Lattice match
1Light emitting diode
1Line intensity
1MOCVD
1MOVPE method
1Magnesium
1Magnetoresistance
1Metallorganic vapor phase epitaxy
1Microelectronic fabrication
1Mid infrared radiation
1Non-radiative Auger recombination mechanism
1Optical characteristic
1Optical power
1Power saturation
1Pulsed mode
1Quasi continuous wave mode
1Quaternary compound
1Semiconducting antimony
1Semiconducting indium compounds
1Semiconductor device manufacture
1Semiconductor device structures
1Semiconductor doping
1Semiconductor growth
1Stimulated emission
1Ternary compound
1Theory
1Transmission electron microscopy
1Wavelength range
1p n junctions

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