S. S. Mamakin < S. S. Mikhrin < S. S. Mikrin

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 31.
[0-20] [0 - 20][0 - 31][20-30][20-40]

Ident.	Authors (with country if any)	Title
000223 (2007)		The impact of thermal effects on the performance of vertical-cavity surface-emitting lasers based on sub-monolayer InGaAs quantum dots
000331 (2006)		1.3-1.5 μm quantum dot lasers on foreign substrates : Growth using defect reduction technique, high-power CW operation, and degradation resistance
000348 (2005)		QD lasers : Physics and applications
000372 (2005)		High-power 1.3μm InAs/GaInAs/GaAs QD lasers grown in a multiwafer MBE production system
000374 (2005)		High power temperature-insensitive 1.3 μm InAs/InGaAs/GaAs quantum dot lasers
000401 (2004-06)		High-Power 1.5 μm InAs-InGaAs Quantum Dot Lasers on GaAs Substrates
000501 (2003-12)		Lasing at 1.5 μm in Quantum Dot Structures on GaAs Substrates
000514 (2003-10)		Temperature Characteristics of Low-Threshold High-Efficiency Quantum-Dot Lasers with the Emission Wavelength from 1.25 to 1.29 μm
000521 (2003-09)		Metamorphic Modulation-Doped InAlAs/InGaAs/InAlAs Heterostructures with High Electron Mobility Grown on GaAs Substrates
000551 (2003-05)		Structural and Optical Properties of InAs Quantum Dots in AlGaAs Matrix
000636 (2003)		MBE growth of low-threshold long-wavelength QD lasers on GaAs substrates
000654 (2003)		InAs/InGaAs/GaAs quantum dot lasers of 1.3 μm range with enhanced optical gain
000662 (2003)		High power lasers based on submonolayer InAs-GaAs quantum dots and InGaAs quantum wells
000716 (2002-09)		The Influence of Heat Treatment Conditions on the Evaporation of Defect Regions in Structures with InGaAs Quantum Dots in the GaAs Matrix
000824 (2002)		InAs/InGaAs/GaAs quantum dot lasers of 1.3 μm range with high (88%) differential efficiency
000884 (2001-09)		1.55-1.6 μm Electroluminescence of GaAs Based Diode Structures with Quantum Dots
000985 (2001)		InAs/InGaAs quantum dot microcavity diode structures on GaAs substrates emitting in the 1.25-1.33 μm wavelength range
000991 (2001)		Gain and threshold characteristics of long wavelength lasers based on InAs/GaAs quantum dots formed by activated alloy phase separation
000A16 (2001)		1300 nm GaAs-based microcavity LED incorporating InAs/GaInAs quantum dots
000A18 (2001)		1.3 μm InAs/GaAs quantum dot lasers and VCSELs grown by molecular beam epitaxy
000A21 (2000-12-15)		Tuning quantum dot properties by activated phase separation of an InGa(Al)As alloy grown on InAs stressors

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List of associated KwdEn.i

Nombre de documents	Descripteur
26	Gallium arsenides
20	Experimental study
14	Indium compounds
14	Semiconductor quantum dots
13	Indium arsenides
12	Semiconductor lasers
10	Quantum dots
8	Molecular beam epitaxy
8	Photoluminescence
7	Binary compounds
7	Current density
6	III-V semiconductors
6	Ternary compounds
5	Infrared laser
5	Quantum well lasers
5	Threshold current
4	Electroluminescence
4	Output power
4	Quantum dot lasers
3	Binary compound
3	Experiments
3	Ground states
3	Laser diodes
3	Quantum dot
3	Semiconductor heterojunctions
3	Semiconductor laser arrays
3	Temperature dependence
3	Vertical cavity laser
2	Aluminium compounds
2	Arsenic compounds
2	Continuous wave
2	Continuous wave lasers
2	High temperature
2	IV characteristic
2	Microcavity
2	Monolayers
2	Quantum yield
2	Reliability
2	Self organization
2	Semiconducting indium compounds
2	Semiconducting indium gallium arsenide
2	Substrates
2	Surface emitting lasers
2	Temperature
2	Theoretical study
2	Transmission electron microscopy
2	quantum dot lasers
2	self-assembly
1	Aging
1	Aluminium arsenides
1	Ambient temperature
1	Bragg reflection
1	Buffer layer
1	Catastrophic optical mirror damage (COMD)
1	Cladding (coating)
1	Conversion rate
1	Cooling system
1	Crystal defects
1	Crystal growth from vapors
1	Damaging
1	Digital simulation
1	Doped materials
1	Durability
1	Electron mobility
1	Energy characteristic
1	Epitaxial growth
1	Etching
1	Excited states
1	Excitons
1	Filamentation
1	Frequency control
1	Gain control
1	Graded-index waveguides
1	Ground state
1	Growth rate
1	Heat sink
1	Heat treatments
1	Heterostructures
1	High power lasers
1	High-power lasers
1	Indium arsenide
1	Injection laser
1	Inorganic compounds
1	Instrumentation
1	Interface states
1	Interface structure
1	Laser cavity resonators
1	Laser transitions
1	Lifetime
1	Light emitting devices
1	Light emitting diode
1	Light emitting diodes
1	Localized states
1	Luminous intensity current characteristic
1	Maximal model gain
1	Measuring methods
1	Microelectronic fabrication
1	Mirrors
1	Modulation
1	Nanostructured materials

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