Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « S. J. Pearton »
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S. J. Amoretty < S. J. Pearton < S. J. Seestrom  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 5.
Ident.Authors (with country if any)Title
000482 (2004) Electrical and luminescent properties and the spectra of deep centers in GaMnN/InGaN light-emitting diodes
000756 (2002-04-15) Enhanced tunneling in GaN/InGaN multi-quantum-well heterojunction diodes after short-term injection annealing
001343 (1995) The influence of hydrogen plasma treatment on reverse currents in InGaP and InGaAlP
001387 (1995) Effects of proton implantation and hydrogen plasma passivation on electrical properties of InGaAlP and InGaP
001400 (1994-12-01) Hydrogen passivation effects in InGaAlP and InGaP

List of associated KwdEn.i

Nombre de
documents
Descripteur
5Experimental study
3Hydrogen
2Aluminium Phosphides
2CV characteristic
2Gallium Phosphides
2III-V compound
2III-V semiconductors
2Indium Phosphides
2Light emitting diodes
2Manufacturing process
2Microelectronic fabrication
2Passivation
2Photoluminescence
2Quaternary compound
2Ternary compound
1Aluminium phosphides
1Annealing
1Annealing temperature
1Carrier density
1Cathodoluminescence
1Conductivity
1Cross section
1Crossed beams
1DLTS
1Dose rate
1Electrical properties
1Electroluminescence
1Energy levels
1External fields
1Frequency characteristic
1Gallium compounds
1Gallium nitrides
1Gallium phosphides
1Heterojunction
1IV characteristic
1Implantation
1Impurity states
1Indium compounds
1Indium nitrides
1Indium phosphides
1Leakage current
1MESA diode
1MOCVD coatings
1Magnetic field effects
1Magnetic ordering
1Manganese nitrides
1Modulation
1N-type conductors
1P-type conductors
1Plasma
1Polarization
1Process improvement
1Proton
1Quaternary compounds
1Resistivity
1Schottky barrier diode
1Semiconductor heterojunctions
1Semiconductor quantum wells
1Semiconductor superlattices
1Space charge
1Surface current
1Surface treatments
1Temperature dependence
1Temperature effect
1Ternary compounds
1Tunnel effect
1Voltage current curve
1Wide band gap semiconductors
1p n junction

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