S. I. Radatsan < S. I. Radautsan < S. I. Rembeza

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 23.
[0-20] [0 - 20][0 - 23][20-22][20-40]

Ident.	Authors (with country if any)	Title
001623 (1992)		Self-diffusion coefficients of sulfur in In2S3, CdIn2S4, and Agln5S8 single crystals
001663 (1992)		Isovalent gallium and arsenic impurity doping of InP grown by liquid-phase epitaxy
001761 (1991)		Photoelectrical properties of Zn3InGaS6 single crystals
001915 (1990)		Influence of fast-electron irradiation on the edge photoluminescence of epitaxial n-type InP films
001917 (1990)		InSb-ZnxCd1-xTe photosensitive thin-film MIS-structures
001937 (1990)		Charge states of tin impurity atoms and their influence on the electical conductivity of In2S3
001966 (1989)		Investigation of traps in InP:Zn single crystals implanted by phosphorus ions
001984 (1989)		About the possibility of double centre formation in InP:Fe:O
001A59 (1988)		Photoconductivity, cathodoluminescence, and optical absorption of CdIn2S2Se2 single crystals
001A60 (1988)		Photoconductivity and luminescence spectra of ZnIn2S4 crystals irradiated by γ-quanta
001A62 (1988)		On the possibility of formation of associated impurity centers in semi-insulating indium phosphide doped by oxygen
001A68 (1988)		Influence of defect generation processes in CdIn2S4 single crystals on the photoluminescence and Raman scattering spectra
001A71 (1988)		Electrical properties of InPe:Fe single crystals implanted by phosphorus ions
001A72 (1988)		Direct optical transitions in CdGaInS4
001B85 (1987)		Photovoltaic effects and space charge limited currents in CdInGaS4 single crystals
001C49 (1987)
001D00 (1986)		Photoluminescence and laser emission in In0.53Ga0.47As/InP layers
001D02 (1986)		Photocapacitance effect in ZnxCd1-xTe-InSb structures
001D56 (1986)
001E09 (1985)
001E34 (1984)		Some properties of ZnTe-InP heterojunctions

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List of associated KwdEn.i

Nombre de documents	Descripteur
18	Experimental study
16	Inorganic compound
14	Semiconductor materials
12	Indium Phosphides
11	Single crystal
8	Photoluminescence
7	Temperature
5	Impurity
5	Iron
5	Photoconductivity
5	Transition metal Compounds
4	Activation energy
3	Cadmium Indium Sulfides Mixed
3	Charge carrier recombination
3	Impurity density
3	Low temperature
3	Radiative recombination
3	Solar cell
2	Absorption edge
2	Cadmium Gallium Indium Sulfides Mixed
2	Codoping
2	Density of states
2	Doping
2	Energy gap
2	Heat treatment
2	Heterojunction
2	Indium Antimonides
2	Indium Sulfides
2	Ion implantation
2	Irradiation
2	Laser beam
2	Optical scattering
2	Oxygen
2	P type conductivity
2	Proton irradiation
2	Schottky barrier
2	Stoichiometry
2	Thermal annealing
2	Thin film
2	Voltage capacity curve
2	Zinc Tellurides
1	Absorptance
1	Acceptor center
1	Annealing
1	Arsenic
1	Cadmium Indium Selenides sulfides Mixed
1	Cadmium Selenides
1	Cadmium Tellurides
1	Cadmium Zinc Tellurides Mixed
1	Cathodoluminescence
1	Charge carrier concentration
1	Charge carrier mobility
1	Charge carrier trapping
1	Chromium
1	Complex defect
1	Crystal defect
1	Deep level
1	Deep level transient spectrometry
1	Defect level
1	Degradation
1	Diffusion coefficient
1	Donor center
1	Doublet state
1	Electrical characteristic
1	Electrical conductivity
1	Electrical properties
1	Electroluminescence
1	Electron paramagnetic resonance
1	Electrons
1	Epitaxial film
1	Exciton
1	Free carrier
1	Gallium
1	Gallium Indium Arsenides Mixed
1	Gamma radiation
1	Hall effect
1	Heterogeneity
1	High temperature
1	Impurity cluster
1	Impurity ionization
1	Impurity pair
1	Indium Zinc Sulfides Mixed
1	Interband transition
1	Interface electron state
1	Lamellar compound
1	Lifetime
1	MIS structure
1	Manufacturing
1	Mechanism
1	Metal insulator contact
1	Moss¨bauer effect
1	N type conductivity
1	Optical absorption
1	Optical characteristic
1	Optical transition
1	Order disorder transformation
1	Oxidation number
1	Phosphorus
1	Photocapacitance
1	Photoelectric current

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