Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « S. Civis »
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S. Chaparro < S. Civis < S. Civish  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 5.
Ident.Authors (with country if any)Title
000652 (2003) InAsSb/InAsSbP current-tunable laser with narrow spectral line width
000791 (2002) Single mode laser based on InAsSb/InAsSbP double heterostructure with tuning from 3.224 to 3.234 μm
000905 (2001-04) The spectral linewidth of tunable semiconductor InAsSb/InAsSbP lasers emitting at 3.2-3.6 μm (2800-3100 cm-1)
000B18 (2000-02) Single-Mode InAsSb/InAsSbP Laser (λ ≃ 3.2 μm) Tunable over 100 Å
000C21 (1999-12) Two-mode diode-laser spectroscopy with a InAsSb/InAsSbP laser near 3.6 μm

List of associated KwdEn.i

Nombre de
documents
Descripteur
4Experimental study
4Semiconductor lasers
3Indium compounds
3Laser tuning
2Antimony compounds
2Arsenic compounds
1Absorption spectra
1Application
1Carrier concentration
1Carrier density
1Closed cycle helium cryostat
1Cryostats
1Electric currents
1Experiments
1Fabry Perot Cavity length
1Heterojunctions
1Hole concentration
1III-V semiconductors
1Indium antimonides
1Indium arsenides
1Indium phosphides
1Infrared spectra
1Infrared spectroscopy
1Instrumentation
1Laser diodes
1Laser modes
1Laser width
1Line widths
1Liquid phase epitaxy
1Measuring methods
1Nitrogen compounds
1Optical waveguides
1Organic compounds
1Oxygen compounds
1Quaternary compounds
1Rotational-vibrational states
1Rovibrational absorption spectra
1Semiconducting indium compounds
1Semiconductor diodes
1Semiconductor doping
1Semiconductor growth
1Semiconductor heterojunctions
1Single mode laser
1Spectral emission line width
1Spectral line
1Spectral line width
1Spectroscopic analysis
1Substrates
1Temperature dependence
1Ternary compounds
1Theoretical study
1Theory
1Threshold current
1Tunable lasers
1Zinc

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