Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « S. A. Nemov »
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S. A. Negachev < S. A. Nemov < S. A. Nikishin  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 35.
[0-20] [0 - 20][0 - 35][20-34][20-40]
Ident.Authors (with country if any)Title
000425 (2004-02) Observation of the Bose Condensation of Cooper Pairs in (Pb1 - xSnx)1 - zInzTe Semiconductor Solid Solutions
000508 (2003-11) Observation of Bose Condensation in (Pb0.4Sn0.6)0.86In0.14Te Semiconductor Solid Solutions Using Mossbauer Spectroscopy
000522 (2003-09) Local Symmetry and Electronic Structure of Tin Atoms in (Pb1-xSnx)1-zInzTe Lattices
000546 (2003-06) Magnetic Susceptibility and Superconductivity of (Pb0.2Sn0.8)1 - xInxTe Alloys as a Function of In Content
000775 (2002-01) Hopping Conduction via Strongly Localized Impurity States of Indium in PbTe and Its Solid Solutions
000869 (2001-10) Superconductivity of (Sn1 - zPbz)1 - xInxTe Alloys
000875 (2001-10) Density of Localized States in (Pb0.78Sn0.22)0.95In0.05Te Solid Solutions
000924 (2001-02) Hopping Transport in Doped (Pb0.78Sn0.22)1 - xInxTe Solid Solutions
000A51 (2000-08-20) Variable-Range-Hopping Conduction via Indium Impurity States in Pb0.78Sn0.22Te Solid Solution
000A58 (2000-07) Superconductivity of In-Doped Sn0.62Pb0.33Ge0.05Te Alloys
000B59 (2000) Observation of superconducting and structural phase transitions in Sn1-zGezTe :In solid solutions
000C25 (1999-12) Dependence of the superconducting transition parameters on the solid-solution composition and Te excess in Sn1-zPbzTe:In
000D02 (1999-04) X-ray microanalysis of quaternary semiconductor solid solutions and its application to the (SnTe-SnSe):In system
000E34 (1998-10) Effect of In doping on the kinetic coefficients in solid solutions of the system (PbzSn1-z)0.95Ge0.05Te
000E44 (1998-09) Optical reflection in Pb0.78Sn0.22Te doped to 3 at.% with indium
000E91 (1998-03) Transport phenomena in the solid solution (Pb0.78Sn0.22)0.97In0.03Te in the hopping conduction region
001137 (1996-12) Thermoelectric power and activation energy for hopping conductivity in Pb0.78Sn0.22Te solid solutions with high In content
001138 (1996-12) Seebeck coefficient and electron energy band in (Pb0.78Sn0.22)0.97In0.03Te solid solutions with additional doping in the range of the hopping conductivity
001173 (1996-07) Influence of quasilocal states of In on defect formation in PbTe
001189 (1996-05) Identification of one- and two-electron impurity centers in semiconductors by Mössbauer spectroscopy
001208 (1996-02) Effect of In additions on the electrical properties of Sn0.8Ge0.2Te thin films obtained by laser sputtering

List of associated KwdEn.i

Nombre de
documents
Descripteur
31Experimental study
15Indium
12Hall effect
12Solid solutions
9Electrical conductivity
9Superconducting transition temperature
8Inorganic compound
8Lead compounds
8Seebeck effect
8Tin compounds
7Indium additions
7Semiconductor materials
7Theoretical study
6Hopping conduction
6Lead alloys
6Tellurium alloys
6Tin alloys
5Chemical composition
5IV-VI semiconductors
5Impurity
5Impurity density
5Indium compounds
5Localized states
5Tellurium compounds
5Temperature
5Thermoelectric power
5Tin tellurides
4Chlorine
4Impurity states
4Lead tellurides
4Thallium
3Charge carrier concentration
3Doped materials
3Electric conductivity
3Germanium tellurides
3Impurities
3Impurity level
3Moessbauer spectroscopy
3Semiconductor doping
3Solid solution
3Very low temperature
2Activation energy
2Bismuth tellurides
2Carrier density
2Compensation
2Critical field
2Donor center
2Electron density
2Electronic density of states
2Electronic structure
2Hole density
2IV-VI compound
2Indium alloys
2Low temperature
2Magnetic field
2Superconducting critical field
2Superconducting films
2Superconducting semiconductors
2Superconducting transition
2Superconductivity
2Tin Lead Selenides Mixed
2Tin Lead Tellurides Mixed
2Transition temperature
2Vacancy
1Band structure
1Bose-Einstein condensation
1Charge compensation
1Chlorine additions
1Crystal defect
1Crystal defect density
1Crystal defects
1Defect states
1Doping
1Doping profiles
1Electrical properties
1Electrical resistivity
1Electron lattice interaction
1Energy gap
1Energy level
1Energy-level density
1Ettingshausen-Nernst effects
1Gallium arsenides
1Gallium phosphides
1Germanium Lead Tellurides Mixed
1Germanium Tellurides
1Germanium alloys
1Germanium compounds
1Hall mobility
1Holes
1Hopping conductivity
1Impurity scattering
1Indium sulfides
1Interband transitions
1Iodine
1Iron 57
1Lead Tellurides
1Lead selenides
1Lead sulfides
1Magnetic field effects
1Magnetic susceptibility

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