S. A. Ivanov < S. A. Karandashev < S. A. Karandashov

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 31.
[0-20] [0 - 20][0 - 31][20-30][20-40]

Ident.	Authors (with country if any)	Title
000099 (2010)		Properties of mid-IR diodes with n-InAsSbP/n-InAs interface
000115 (2010)		InGaAsSb LED arrays (λ = 3.7 μm) with Photonic Crystals
000145 (2009)		Midinfrared (λ= 3.6 μm) LEDs and arrays based on InGaAsSb with photonic crystals
000235 (2007)		Performance of InAs-based infrared photodiodes
000245 (2007)		Inas and InAs(Sb)(P) (3-5 μm) immersion lens photodiodes for portable optic sensors
000354 (2005)		P+-InAsSbP/n-InAs photodiodes for IR optoelectronic sensors
000432 (2004-01)		Strongly Compensated InAs Obtained by Proton Irradiation
000528 (2003-08)		Negative Luminescence at 3.9 μm in InGaAsSb-Based Diodes
000638 (2003)		Low voltage episide down bonded mid-IR diode optopairs for gas sensing in the 3.3-4.3 μm spectral range
000656 (2003)		InAs and InAsSb LEDs with built-in cavities
000730 (2002-08)		Lattice-Matched GaInPAsSb/InAs Structures for Devices of Infrared Optoelectronics
000735 (2002-07)		Optically Pumped Immersion-Lens Infrared Light Emitting Diodes Based on Narrow-Gap III-V Semiconductors
000782 (2002)		Towards longwave (5-6 μm) LED operation at 80°C: Injection or extraction of carriers?
000860 (2001-12)		Radiative Recombination via Direct Optical Transitions in In1 - xGaxAs (0 ≤ x ≤ 0.16) Solid Solutions
000872 (2001-10)		High Power InGaAsSb(Gd)/InAsSbP Double Heterostructure Lasers (λ = 3.3 μm)
000902 (2001-05)		Light Emitting Diodes for the Spectral Range λ = 3.3-4.3 μm Fabricated from InGaAs and InAsSbP Solid Solutions: Electroluminescence in the Temperature Range of 20-180°C (Part 21)
000915 (2001-03)		Optically Pumped Mid-Infrared InGaAs(Sb) LEDs
000916 (2001-03)		Negative Luminescence in p-InAsSbP/n-InAs Diodes
000A66 (2000-07)		InGaAsSb(Gd)/InAsSbP Double Heterostructure Lasers (λ = 3.0-3.3 μm) for Diode Laser Spectroscopy
000A94 (2000-04)		Spectral Characteristics of Lasers Based on InGaAsSb/InAsSbP Double Heterostructures (λ = 3.0-3.6 μm)
000B28 (2000-01)		Light Emitting Diodes for the Spectral Range of λ = 3.3-4.3 μm Fabricated from the InGaAs- and InAsSbP-Based Solid Solutions: Electroluminescence in the Temperature Range of 20-180°C

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List of associated KwdEn.i

Nombre de documents	Descripteur
20	Experimental study
16	Indium compounds
13	Gallium arsenides
10	Light emitting diodes
9	Antimony compounds
7	Electroluminescence
6	Indium Arsenides
6	Indium arsenides
6	Photodiodes
5	Binary compounds
5	III-V semiconductors
5	Photoluminescence
5	Semiconductor lasers
4	LPE
4	Semiconductor heterojunctions
4	Theoretical study
3	Ambient temperature
3	Arsenic compounds
3	Charge carrier recombination
3	Gallium compounds
3	Heterojunctions
3	Heterostructures
3	Indium Antimonides arsenides phosphides
3	Indium antimonides
3	Light emitting diode
3	Phosphorus compounds
3	Solid solutions
3	p n heterojunctions
2	Binary compound
2	Experiments
2	Flip chip bonding
2	Gadolinium
2	Gallium Indium Arsenides Mixed
2	Imagery
2	Indium phosphides
2	Laser tuning
2	Measuring methods
2	Narrow band gap semiconductors
2	Optical sensors
2	Optoelectronic devices
2	P n junction
2	Photonic crystals
2	Quantum yield
2	Semiconductor growth
2	Temperature dependence
2	Tunnel effect
2	Voltage current curve
1	Acceptor center
1	Activation energy
1	Application
1	Arsenic Antimonides
1	Atomic force microscopy
1	Auger recombination
1	Bent graded layer
1	Cadmium
1	Carbon dioxide
1	Carrier density
1	Carrier mobility
1	Cavity
1	Circular mesa constructions
1	Computer simulation
1	Conduction bands
1	Current density
1	Current voltage characteristics
1	Defect states
1	Dislocation density
1	Doping
1	Double heterojunction
1	Electric contact
1	Electric currents
1	Electrical conductivity
1	Electron density
1	Electron-hole recombination
1	Emission
1	Emission spectrum
1	Energy gap
1	Energy-level transitions
1	Epitaxial film
1	Epitaxial layers
1	Far field
1	Fermi level
1	Figure of merit
1	Flip chip devices
1	Gadolinium compounds
1	Gallium Indium Antimonides arsenides Mixed
1	Gas detector
1	Graded band gap
1	Heterojunction
1	Illumination
1	Infrared detectors
1	Infrared sensing
1	Infrared sources
1	Infrared spectra
1	Injection laser
1	Inorganic compound
1	Interface states
1	Interface structure
1	Laser
1	Lattice constants
1	Lattice match

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