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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « R. Kh. Akchurin »
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R. Kamphausen < R. Kh. Akchurin < R. Kh. Zhukavin  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 12.
Ident.Authors (with country if any)Title
000108 (2010) Modeling of In segregation, stress and strain in InGaAs/GaAs(100) quantum well heterostructures
000783 (2002) The influence of elastic stresses during growth of (Al)GaAs/InGaAs/(Al)GaAs quantum well heterostructures on indium distribution
000F56 (1998) Evaluation of elastic constants of AlN, GaN, and InN
001025 (1997-07) Formation of multilayer strained-layer heterostructures by liquid epitaxy. II. Simulation of the fabrication of heterostructures based on indium-arsenic-antimony-bismuth solid solutions
001045 (1997-04) Fabrication of indium arsenic-antimony-bismuthide multilayer heterostructures by capillary liquid-phase epitaxy
001307 (1995-07) Dislocation structure of InAs1-x-ySbxBiy/InSb heterostructures
001332 (1995-02) Strained thin-layer InAs1-x-ySbxBiy/InSb heterostructures: calculation of certain physical properties
001393 (1995) Conditions for LPE growth of InAs1-x-ySbxBiy/InSb heterostructures
001939 (1990) Analysis of the interaction of the liquid and solid phases in heteroepitaxy. II, Calculations for the indium-arsenic-antimony/indium antimonide and indium-arsenic-antimony/indium arsenide systems
001A45 (1989)
001B75 (1988)
001D70 (1986)

List of associated KwdEn.i

Nombre de
documents		Descripteur
5Experimental study
5Indium arsenides
5Semiconductor materials
5Theoretical study
4LPE
4Solid solutions
3Heterostructures
3Indium antimonides
3Inorganic compound
2Antimony
2Bismuth
2Bismuth compounds
2Chemical composition
2Computerized simulation
2Crystallization
2Doping
2Gallium Arsenides
2Gallium arsenides
2Growth mechanism
2III-V semiconductors
2Impurity density
2Indium
2Indium compounds
2Interstitial
2MOCVD
2Quantum wells
2Vacancy
1Acceptor center
1Aluminium arsenides
1Aluminium nitrides
1Antimony compounds
1Arsenic compounds
1Binary compounds
1Boundary layers
1Codoping
1Crystal defect density
1Crystal growth
1Depth profiles
1Digital simulation
1Dislocations
1Elastic constants
1Elastic deformation
1Elasticity
1Epitaxial layers
1Epitaxy
1Etching
1Free energy
1Gallium nitrides
1Growth from liquid
1Growth from melt
1Growth from solid state
1Growth from solution
1Heteroepitaxy
1Heterojunctions
1III-V compound
1Impurity distribution
1Indium Arsenic
1Indium Arsenic Antimony
1Indium Bismuthides
1Indium Phosphides
1Indium nitrides
1Infrared radiation
1Kinetics
1Liquid solid interface
1Mechanical properties
1Mechanical stress
1Modelling
1Nanostructured materials
1Nanostructures
1Operating mode
1Organometallic compounds
1Photodetectors
1Photoluminescence
1Point defect
1Quaternary compounds
1SEM
1Secondary ion mass spectra
1Semiconductor growth
1Semiconductor heterojunctions
1Single crystal
1Solubility
1Strain energy
1Strains
1Stress distribution
1Surface segregation
1Surface stresses
1Temperature range 0065-0273 K
1Ternary compounds
1Ternary system
1Thermodynamic analysis
1Thickness
1Thin film
1Thin films
1Vapor deposition
1X-ray topography
1XRD

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