Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « P. Werner »
Attention, ce site est en cours de développement !
Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.
P. Werle < P. Werner < P. Wyder  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 32.
[0-20] [0 - 20][0 - 32][20-31][20-40]
Ident.Authors (with country if any)Title
000129 (2010) Temperature dependent basic solid state physics luminescence from quantum dot arrays: phonon-assisted line broadening versus carrier escape-induced narrowing
000312 (2006) Longitudinal photonic bandgap crystal laser diodes with ultra-narrow vertical beam divergence
000334 (2005) Ultrahigh gain and non-radiative recombination channels in 1.5 μm range metamorphic InAs-InGaAs quantum dot lasers on GaAs substrates
000348 (2005) QD lasers : Physics and applications
000399 (2004-06) Spectroscopy of Exciton States of InAs Quantum Molecules
000485 (2004) Effect of growth kinetics on the structural and optical properties of quantum dot ensembles
000499 (2003-12) Room-Temperature 1.5-1.6 μm Photoluminescence from InGaAs/GaAs Heterostructures Grown at Low Substrate Temperature
000668 (2003) Formation specifity of InAs/GaAs submonolayer superlattice
000816 (2002) Long-wavelength quantum-dot lasers
000983 (2001) Incorporation of InAs nanostructures in a silicon matrix : growth, structure and optical properties
000A59 (2000-07) Study of Multilayer Structures with InAs Nanoobjects in a Silicon Matrix
000A82 (2000-05-08) Structure and optical properties of Si/InAs/Si layers grown by molecular beam epitaxy on Si substrate
000C34 (1999-10-18) Optical and structural properties of InAs quantum dots in a GaAs matrix for a spectral range up to 1.7 μm
000C65 (1999-08) Long-wavelength emission in structures with quantum dots formed in the stimulated decomposition of a solid solution at strained islands
000D11 (1999-03-22) Optical properties of InAs quantum dots in a Si matrix
000D12 (1999-03-15) Enhanced precipitation of excess As on antimony delta layers in low-temperature-grown GaAs
000D55 (1999) Self-organized InAs quantum dots in a silicon matrix
000D68 (1999) Ordered arrays of arsenic clusters coincided with InAs/GaAs superlattices grown by low-temperature MBE
000D80 (1999) Lasing in structures with InAs quantum dots in an (Al, Ga)As matrix grown by submonolayer deposition : Special issue papers on quantum dots
000E18 (1999) 1.75 μm emission from self-organized InAs quantum dots on GaAs
000E36 (1998-10) Arsenic cluster superlattice in gallium arsenide grown by low-temperature molecular-beam epitaxy

List of associated KwdEn.i

Nombre de
documents
Descripteur
28Experimental study
21Gallium arsenides
18Indium arsenides
18Photoluminescence
14Molecular beam epitaxy
13III-V semiconductors
12Quantum dots
11Indium compounds
10TEM
9Binary compounds
9Semiconductor materials
8Ternary compounds
7Crystal growth from vapors
7Semiconductor quantum dots
5Multilayers
4Island structure
4XRD
3Annealing
3Characterization
3Nanostructures
3Self organization
3Semiconductor growth
3Semiconductor lasers
3Silicon
3Threshold current
3Transmission electron microscopy
2Aluminium arsenides
2Aluminium compounds
2Arsenic compounds
2Density
2Electroluminescence
2Electronic structure
2Excitons
2Heteroepitaxy
2Heterojunctions
2Nanostructured materials
2Precipitation
2Quantum well lasers
2RHEED
2Semiconductor epitaxial layers
2Semiconductor heterojunctions
2Superlattices
2Temperature dependence
2Temperature effects
2Theoretical study
1Activation energy
1Aggregate
1Aluminium phosphides
1Anisotropy
1Antimony
1Atomic force microscopy
1Beam profiles
1Binary compound
1Buffer layer
1CVD
1Cathodoluminescence
1Chemical interdiffusion
1Composite materials
1Continuous wave
1Cooling system
1Crystal microstructure
1Crystal morphology
1Damaging
1Doped materials
1Doping profiles
1Durability
1Elemental semiconductors
1Energy gap
1Epitaxial layers
1Exciton phonon interaction
1Far field
1Fourier transformation
1Frequency control
1Germanium
1Ground states
1Growth rate
1Heat sink
1Heterostructures
1High temperature
1High-resolution methods
1IV characteristic
1Images
1Infrared laser
1Infrared spectra
1Inorganic compounds
1Integrated intensity
1Interface states
1Interface structure
1Kinetics
1Laser diodes
1Laser materials
1Lasers
1Light emitting diodes
1Line broadening
1Line widths
1Localized states
1Low temperature
1MOCVD
1Microstructure
1Monolayers

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Russie/Analysis
HfdIndexSelect -h $EXPLOR_AREA/Data/Russie/Analysis/Author.i -k "P. Werner" 
HfdIndexSelect -h $EXPLOR_AREA/Data/Russie/Analysis/Author.i  \
                -Sk "P. Werner" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/Russie/Analysis/biblio.hfd 

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Russie
   |étape=   Analysis
   |type=    indexItem
   |index=    Author.i
   |clé=    P. Werner
}}

Wicri

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024