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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « P. G. Eliseev »
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P. F. Rutkovskij < P. G. Eliseev < P. G. Rustamov  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 13.
Ident.Authors (with country if any)Title
000341 (2005) Spectral perturbations in a semiconductor laser: I. Anomalous splitting in the mode-beating spectrum
000481 (2004) Electro-optical properties of UV-emitting InGaN heterostructures considering injection-induced conductivity
000550 (2003-05-01) The red σ2/kT spectral shift in partially disordered semiconductors
000B58 (2000) Optical gain in InAs/InGaAs quantum-dot structures : Experiments and theoretical model
000C05 (2000) Band-tail model and temperature-induced blue-shift in photoluminescence spectra of InxGa1-xN grown on sapphire
000E30 (1998-11) Erratum: Radiation emitted by quantum-well InGaAs structures I. Spontaneous emission spectra [Semiconductors 32, 423-427 (April 1998)]
000F57 (1998) Emission from quantum-well InGaAs structures
001225 (1996) Spontaneous emission from a quantum-well GaN/InGaN/AlGaN heterostructure at high pump currents
001497 (1994) A study of laser emission wavelength variations in 1.5 μm InGaAsP/InP BRS laser diodes: theoretical model and experiment
001608 (1992) Study of static properties of a 1.3 μm range optical amplifier
001B73 (1988)
001E36 (1984) Low-threshold current density InGaAsP/InP injection lasers with three-layer-waveguide double heterostructure (jth≃0.5 kA/cm2 AT 300 K)
001E88 (1984)

List of associated KwdEn.i

Nombre de
documents		Descripteur
8Experimental study
6Ternary compounds
5Gallium arsenides
4Binary compounds
4Injection laser
4Quantum wells
4Semiconductor lasers
3III-V semiconductors
3Indium arsenides
3Semiconductor laser
3Theoretical study
2Gallium Indium Arsenides phosphides Mixed
2Gallium nitrides
2Indium compounds
2Indium nitrides
2Laser diodes
2Photoluminescence
2Red shift
2Semiconductor materials
2Spontaneous emission
2Temperature dependence
1Aluminium nitrides
1Anomalous properties
1Antireflection coating
1Arsenides
1Beats
1Blue shift
1Difference frequency
1Double heterojunction
1Electroluminescence
1Electrooptical properties
1Energy-level density
1Forbidden transitions
1Gallium
1Gallium Indium Antimonides arsenides Mixed
1Gallium compounds
1Gallium phosphides
1Heavily doped semiconductors
1Heterojunction
1Heterostructures
1IV characteristic
1Indium
1Indium Gallium Arsenides
1Indium Gallium Nitrides
1Indium phosphides
1Infrared radiation
1Injection current
1Light emitting diodes
1Line broadening
1Line splitting
1Line widths
1Optical amplifier
1Phosphorus
1Quantum dot lasers
1Quantum dots
1Quantum well lasers
1Quaternary compounds
1Radiative recombination
1Room temperature
1Semiconductor quantum wells
1Single mode waveguide
1Spectral line shift
1Strained quantum well
1Temperature effects
1Ultraviolet radiation
1Visible spectra
1Wavelengths
1Wide band gap semiconductors

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