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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « O. G. Ershov »
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O. F. Kolomys < O. G. Ershov < O. G. Garkusha  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 9.
Ident.Authors (with country if any)Title
000E92 (1998-03) Spatial distribution of the radiation in the far zone of InAsSb/InAsSbP mesastrip lasers as a function of current
000F00 (1998-02) InAsSbP double-heterostructure lasers for the spectral range 2.7-3.0 μm (T=77 K)
000F88 (1997-11) Current tuning of the emission wavelength of low-threshold mesa stripe lasers utilizing InAsSb/InAsSbP double heterostructures and emitting in the vicinity of 3.3μm
001012 (1997-08) InAsSb/InAsSbP diode lasers with separate electrical and optical confinement, emitting at 3-4 μm
001171 (1996-07) Maximum working temperature of InAsSb/InAsSbP diode lasers
001200 (1996-03) Tunnel-injection laser based on a single p-GaInAsSb/p-InAs type-II broken-gap heterojunction
001292 (1995-09) Polarization of the emission from double-heterostructure lasers based on InAsSb/InAsSbP
001647 (1992) Nature of the long-wavelength shift of the spectrum of coherent radiation emitted from GalnAsSb heterolasers
001B55 (1988)

List of associated KwdEn.i

Nombre de
documents		Descripteur
7Experimental study
7Semiconductor lasers
4III-V semiconductors
4Indium compounds
3Current density
3Indium antimonides
3Indium arsenides
2Heterojunctions
2Indium phosphides
2Laser modes
2Laser tuning
2Semiconductor laser
1Auger effect
1Electron-hole recombination
1Emission spectrum
1Fabrication
1Gallium Indium Antimonides Arsenides Mixed
1Gallium Indium Antimonides arsenides Mixed
1Gallium antimonides
1Gallium arsenides
1Heterojunction
1Laser radiation
1Operation
1Polarization
1Quantum well
1Semiconductor epitaxial layers
1Semiconductor heterojunctions
1Temperature dependence
1Temperature range
1Temperature range 0065-0273 K
1Threshold current
1Tunneling
1Wide band gap semiconductors

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