Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « N. Yu. Gordeev »
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N. Yu. Davidyuk < N. Yu. Gordeev < N. Yu. Markova  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 23.
[0-20] [0 - 20][0 - 23][20-22][20-40]
Ident.Authors (with country if any)Title
000219 (2008) A 1.33 μm InAs/GaAs quantum dot laser with a 46 cm-1 modal gain
000223 (2007) The impact of thermal effects on the performance of vertical-cavity surface-emitting lasers based on sub-monolayer InGaAs quantum dots
000312 (2006) Longitudinal photonic bandgap crystal laser diodes with ultra-narrow vertical beam divergence
000403 (2004-06) Electroluminescent Studies of Emission Characteristics of InGaAsN/GaAs Injection Lasers in a Wide Temperature Range
000431 (2004-01-05) Time-resolved photoluminescence measurements of InAs self-assembled quantum dots grown on misorientated substrates
000514 (2003-10) Temperature Characteristics of Low-Threshold High-Efficiency Quantum-Dot Lasers with the Emission Wavelength from 1.25 to 1.29 μm
000590 (2003-01) Electroluminescence of Injection Lasers Based on Vertically Coupled Quantum Dots near the Lasing Threshold
000740 (2002-06) Waveguide InGaAsP/InP Photodetectors for Low-Power Autocorrelation Measurements at 1.55 μm
000B07 (2000-03) Treatment of Inhomogeneous Radiation Broadening in Quantum Dot Heterostructures Described within the Framework of the Superradiation Model
000C22 (1999-12) Superradiance in semiconductors
000C82 (1999-07) Collective resonances and shape function for homogeneous broadening of the emission spectra of quantum-well semiconductor heterostructures
000D23 (1999-02) Time-resolved photoluminescence and carrier dynamics in vertically-coupled self-assembled quantum dots
000E57 (1998-07) Investigation of the device characteristics of a low-threshold quantum-dot laser emitting at 1.9 μm
000F43 (1998) Injection lasers based on InGaAs quantum dots in an AlGaAs matrix
001005 (1997-09) Quantum-dot lasers: Principal components of the threshold current density
001032 (1997-06) Optical properties of vertically coupled InGaAs quantum dots in a GaAs matrix
001037 (1997-05) The properties of low-threshold heterolasers with clusters of quantum dots
001044 (1997-04) Injection heterolaser based on an array of vertically aligned InGaAs quantum dots in a AlGaAs matrix
001060 (1997-01) Thermal stability of vertically coupled InAs-GaAs quantum dot arrays
001068 (1997) Vertically coupled quantum dot lasers: First device oriented structures with high internal quantum efficiency
001095 (1997) Radiation characteristics of injection lasers based on vertically coupled quantum dots

List of associated KwdEn.i

Nombre de
documents
Descripteur
21Gallium arsenides
20Experimental study
15Indium compounds
12Semiconductor lasers
10III-V semiconductors
8Semiconductor quantum dots
8Ternary compounds
8Threshold current
7Current density
7Indium arsenides
7Quantum dots
5Aluminium compounds
4Binary compounds
4Photoluminescence
4Quantum well lasers
4Temperature dependence
3Injection laser
3Semiconductor quantum wells
3Superradiance
3Theoretical study
2Aluminium arsenides
2Electroluminescence
2Interface states
2Optical confinement
2Optical waveguides
2Output power
2Semiconductor heterojunctions
2Temperature
2Temperature effects
2Time resolved spectra
2quantum dot lasers
1Aluminium phosphides
1Ambient temperature
1Arsenic compounds
1Beam profiles
1Bragg reflection
1CVD
1CW lasers
1Electroabsorption
1Electroluminescent devices
1Electronic density of states
1Energy gap
1Excited states
1Excitons
1Far field
1Gallium Arsenides
1Ground states
1Heterostructures
1High temperature
1High-temperature effects
1Indium Arsenides
1Infrared spectra
1LPE
1Laser diodes
1Laser materials
1Laser mirrors
1Light emitting diodes
1Line broadening
1Line widths
1Localized states
1Molecular beam epitaxy
1Monolayers
1Multilayers
1Nitrogen compounds
1Optical losses
1Optical materials
1Phosphorus compounds
1Photodetectors
1Photonic band gap
1Quantization(quantum theory)
1Quantum dot lasers
1Quantum efficiency
1Quantum wires
1Quantum yield
1Radiative lifetimes
1Rapid thermal annealing
1Refractive index
1Self-assembly
1Semiconductor epitaxial layers
1Semiconductor growth
1Spot size
1Strains
1Surface emitting lasers
1Surface recombination
1Two-photon spectra
1Vertical cavity laser
1Visible spectra
1self-assembly

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