N. V. Zavaritskij < N. V. Zotova < N. Vinogradova

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 43.
[0-20] [0 - 20][0 - 43][20-40]

Ident.	Authors (with country if any)	Title
000099 (2010)		Properties of mid-IR diodes with n-InAsSbP/n-InAs interface
000145 (2009)		Midinfrared (λ= 3.6 μm) LEDs and arrays based on InGaAsSb with photonic crystals
000235 (2007)		Performance of InAs-based infrared photodiodes
000245 (2007)		Inas and InAs(Sb)(P) (3-5 μm) immersion lens photodiodes for portable optic sensors
000354 (2005)		P+-InAsSbP/n-InAs photodiodes for IR optoelectronic sensors
000432 (2004-01)		Strongly Compensated InAs Obtained by Proton Irradiation
000528 (2003-08)		Negative Luminescence at 3.9 μm in InGaAsSb-Based Diodes
000532 (2003-08)		Characterization of Light-Emitting Diodes Based on InAsSbP/InAsSb Structures Grown by Metal-Organic Vapor-Phase Epitaxy
000618 (2003)		Powerful InAsSbP/InAsSb light emitting diodes grown by MOVPE
000638 (2003)		Low voltage episide down bonded mid-IR diode optopairs for gas sensing in the 3.3-4.3 μm spectral range
000656 (2003)		InAs and InAsSb LEDs with built-in cavities
000727 (2002-08-12)		6 W InGaAsSb(Gd)/InAsSbP double-heterostructure diode lasers emitting at λ=3.3 μm
000730 (2002-08)		Lattice-Matched GaInPAsSb/InAs Structures for Devices of Infrared Optoelectronics
000735 (2002-07)		Optically Pumped Immersion-Lens Infrared Light Emitting Diodes Based on Narrow-Gap III-V Semiconductors
000782 (2002)		Towards longwave (5-6 μm) LED operation at 80°C: Injection or extraction of carriers?
000829 (2002)		High-power mid-infrared light emitting diodes grown by MOVPE
000860 (2001-12)		Radiative Recombination via Direct Optical Transitions in In1 - xGaxAs (0 ≤ x ≤ 0.16) Solid Solutions
000872 (2001-10)		High Power InGaAsSb(Gd)/InAsSbP Double Heterostructure Lasers (λ = 3.3 μm)
000879 (2001-09)		InAs/InAsSbP Light-Emitting Structures Grown by Gas-Phase Epitaxy
000902 (2001-05)		Light Emitting Diodes for the Spectral Range λ = 3.3-4.3 μm Fabricated from InGaAs and InAsSbP Solid Solutions: Electroluminescence in the Temperature Range of 20-180°C (Part 21)
000915 (2001-03)		Optically Pumped Mid-Infrared InGaAs(Sb) LEDs

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List of associated KwdEn.i

Nombre de documents	Descripteur
28	Experimental study
21	Indium compounds
16	Gallium arsenides
15	Light emitting diodes
13	Antimony compounds
12	Photoluminescence
10	Electroluminescence
10	Indium arsenides
9	III-V semiconductors
8	Arsenic compounds
8	Semiconductor lasers
6	Heterojunctions
6	Indium Arsenides
6	Indium antimonides
6	Photodiodes
6	Semiconductor heterojunctions
6	Theoretical study
5	Indium Antimonides arsenides phosphides
5	Phosphorus compounds
4	Binary compounds
4	Heterostructures
4	Indium phosphides
4	LPE
4	Light emitting diode
3	Ambient temperature
3	Charge carrier recombination
3	Energy gap
3	Experiments
3	Gadolinium
3	Gallium compounds
3	Inorganic compound
3	Mid infrared radiation
3	Semiconductor growth
3	Semiconductor materials
3	Solid solutions
3	VPE
3	p n heterojunctions
2	Binary compound
2	CVD
2	Carbon dioxide
2	Electric currents
2	Energy-level transitions
2	Epitaxial film
2	Epitaxial layers
2	Gallium Indium Arsenides Mixed
2	Gas detector
2	Heterojunction
2	Laser tuning
2	Lattice match
2	Measuring methods
2	Narrow band gap semiconductors
2	Optical sensors
2	Optoelectronic devices
2	P n junction
2	Quantum yield
2	Quaternary compounds
2	Radiative recombination
2	Semiconducting indium compounds
2	Semiconductor device structures
2	Temperature dependence
2	Ternary compound
2	Theory
2	Thin film
2	Tunnel effect
2	Voltage current curve
1	Acceptor center
1	Activation energy
1	Antimony Arsenides
1	Application
1	Arsenic Antimonides
1	Atomic force microscopy
1	Auger recombination
1	Band offset
1	Band structure
1	Bent graded layer
1	Cadmium
1	Carbon monoxide
1	Carrier density
1	Carrier mobility
1	Cavity
1	Chemical composition
1	Circular mesa constructions
1	Computer simulation
1	Conduction bands
1	Cross sectional transmission electron microscopy
1	Current density
1	Current voltage characteristics
1	Defect absorption spectra
1	Defect states
1	Dislocation density
1	Doping
1	Double heterojunction
1	Electric contact
1	Electrical conductivity
1	Electron density
1	Electron-hole recombination
1	Emission
1	Emission spectrum
1	Fermi level
1	Fermi surface

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