Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « N. V. Nomerotsky »
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N. V. Mushuikov < N. V. Nomerotsky < N. V. Orekhova  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 5.
Ident.Authors (with country if any)Title
001183 (1996-05-15) Highly strained InGaAsP films with high critical thicknesses
001242 (1996) Liquid phase epitaxy of highly strained InGaAsP/GaAs films in the 1.4-1.8 eV interval of band gaps
001282 (1995-10-23) InGaAsP/GaAs elastically strained quaternary solid solutions with high critical thicknesses grown by liquid phase epitaxy
001369 (1995) Liquid phase epitaxial growth of elastically strained InGaAsP layers for spin-polarized electron sources
001370 (1995) Liquid phase epitaxial growth of elastically strained InxGa1-xP and InxGa1-xAsyP1-y solid solutions on GaAs substrates

List of associated KwdEn.i

Nombre de
documents
Descripteur
5Experimental study
4Gallium arsenides
4Quaternary compounds
3Crystal growth
3Elastic deformation
3Epitaxial layers
3Indium phosphides
3LPE
3Semiconductor materials
2Gallium phosphides
2Indium arsenides
2Mismatch lattice
2Pseudomorphic growth
2Strained layer
1Binary compounds
1Criticality
1Crystal orientation
1Electronic structure
1Energy gap
1Epitaxy
1Film growth
1Gallium Arsenides phosphides
1Heterojunctions
1Indium Arsenides phosphides
1Liquid phase
1Photoelectron spectroscopy
1Solid solutions
1Strains
1Stresses
1Ternary compounds
1Thickness
1Thin films

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