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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « N. V. Kryzhanovskaya »
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N. V. Kryjanovskaya < N. V. Kryzhanovskaya < N. V. Kuleshov  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 17.
Ident.Authors (with country if any)Title
000061 (2011) Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice
000219 (2008) A 1.33 μm InAs/GaAs quantum dot laser with a 46 cm-1 modal gain
000312 (2006) Longitudinal photonic bandgap crystal laser diodes with ultra-narrow vertical beam divergence
000326 (2006) Comparative study of GaAs-based 1.5 micron-range InAs/InGaAs and InAs/InAlAs self-assembled quantum dots
000349 (2005) Properties of InGaAsN heterostructures emitting at 1.3-1.55 μm
000401 (2004-06) High-Power 1.5 μm InAs-InGaAs Quantum Dot Lasers on GaAs Substrates
000411 (2004-04) The Effect of Exposure to Arsenic Flow on the Optical Properties of Quantum Dot Arrays in the InAs/GaAs(100) System
000417 (2004-03) Structural and Optical Properties of Heterostructures with InAs Quantum Dots in an InGaAsN Quantum Well Grown by Molecular-Beam Epitaxy
000421 (2004-03) Dependence of Structural and Optical Properties of QD Arrays in an InAs/GaAs System on Surface Temperature and Growth Rate
000526 (2003-08) Quantum Dots in InAs Layers of Subcritical Thickness on GaAs(100)
000536 (2003-07) Theoretical and Experimental Study of the Effect of InAs Growth Rate on the Properties of QD Arrays in InAs/GaAs System
000593 (2003) Valence band structure of GaAsN compounds and band-edge lineup in GaAs/GaAsN/InGaAs heterostructures
000642 (2003) Investigation of the formation of InAs QD's in a AlGaAs matrix
000662 (2003) High power lasers based on submonolayer InAs-GaAs quantum dots and InGaAs quantum wells
000709 (2002-11) Room-Temperature Photoluminescence at 1.55 μm from Heterostructures with InAs/InGaAsN Quantum Dots on GaAs Substrates
000716 (2002-09) The Influence of Heat Treatment Conditions on the Evaporation of Defect Regions in Structures with InGaAs Quantum Dots in the GaAs Matrix
000747 (2002-05) Photoluminescence in the 1.55 μm Wavelength Range in the InGaAs/GaAs System with Quantum Dots and Wells

List of associated KwdEn.i

Nombre de
documents		Descripteur
15Gallium arsenides
12Experimental study
12Photoluminescence
9Indium compounds
8Molecular beam epitaxy
8Quantum dots
6Indium arsenides
5Ternary compounds
4Binary compounds
4III-V semiconductors
4Semiconductor quantum dots
3Aluminium arsenides
3Output power
3Transmission electron microscopy
2Arrays
2Arsenic compounds
2Band offset
2Crystal defects
2Energy-level transitions
2Growth mechanism
2Heterostructures
2Island structure
2Nanostructures
2Nitrogen compounds
2Optical confinement
2Quantum dot lasers
2Quantum wells
2Semiconductor heterojunctions
2Semiconductor lasers
2Superlattices
2Temperature
2Theoretical study
2Threshold current
1Aluminium phosphides
1Ambient temperature
1Band splitting
1Band structure
1Beam profiles
1Buffer layer
1Chemical composition
1Current density
1Defect structure
1Doping
1Electroluminescence
1Electron diffraction
1Energy gap
1Energy levels
1Epitaxial layers
1Epitaxy
1Excited states
1Excitons
1Far field
1Flip-chip
1Free carrier
1Gallium Arsenides
1Gallium nitride
1Gallium nitrides
1Ground states
1Heat treatments
1High temperature
1High-power lasers
1III-V compound
1Impurities
1Indium Arsenides
1Indium nitride
1Indium nitrides
1Interface structure
1Laser diodes
1Laser materials
1Light emitting diodes
1Localization
1Localized states
1MOCVD
1Monolayers
1Multilayers
1Nanostructured materials
1Nickel
1Nitrogen additions
1Optical materials
1Optical properties
1Optical waveguides
1Photonic band gap
1Quantum well lasers
1Quantum yield
1Refractive index
1Self-assembled layers
1Semiconductor materials
1Semiconductor quantum wells
1Silver
1Size effect
1Spectra
1Spot size
1Stokes shift
1Strained layer
1Strains
1Surface structure
1Tensile stress
1Valence bands
1XRD

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