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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « N. V. Baidus »
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N. V. Avramenko < N. V. Baidus < N. V. Canina  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 13.
Ident.Authors (with country if any)Title
000163 (2009) Electrical spin-injection and depolarization mechanisms in forward biased ferromagnetic Schottky diodes
000315 (2006) Influence of matrix defects on the photoluminescence of InAs self-assembled quantum dots
000410 (2004-04) Tuning the Energy Spectrum of InAs/GaAs Quantum Dots by Varying the Thickness and Composition of the Thin Double GaAs/InGaAs Cladding Layer
000495 (2004) 1.3-1.5 μm electroluminescence from Schottky diodes made on Au-InAs/GaAs quantum-size heterostructures
000571 (2003-02) Segregation of Indium in InGaAs/GaAs Quantum Wells Grown by Vapor-Phase Epitaxy
000927 (2001-01) Influence of Bismuth Doping of InAs Quantum-Dot Layer on the Morphology and Photoelectronic Properties of Gas/InAs Heterostructures Grown by Metal-Organic Chemical Vapor Deposition
000970 (2001) Morphology and photoelectronic properties of InAs/GaAs surface quantum dots grown by metal-organic vapour-phase epitaxy
001461 (1994-01) Use of quantum-well structures to study defect formation at semiconductor surfaces
001578 (1993) Effect of recombination in the space charge region of the illuminance characteristics of the surface photo-emf of GaAs and InP
001636 (1992) Photoelectron phenomena in GaAs layers with a built-in surface quantum heterowell
001672 (1992) Influence of sulfiding on the state of the surface and photoelectric properties of InP and GaAs
001689 (1992) Electronic state of the surface of InP modified by treatment in sulfur vapor
001691 (1992) Electron state of a surface of InP modified by treatment in sulfur vapor

List of associated KwdEn.i

Nombre de
documents		Descripteur
10Experimental study
9Gallium arsenides
6Semiconductor materials
5Indium arsenides
4Photoluminescence
3Indium Phosphides
3Indium compounds
3Inorganic compound
3Quantum dots
3Space charge
3Surface electron state
3Surface treatment
2Band bending
2Controlled atmosphere
2Electroluminescence
2Gallium Arsenides
2Heterostructures
2Indium Sulfides
2MIS structure
2MOCVD
2Quantum wells
2Schottky barriers
2Semiconductor heterojunctions
2Semiconductor quantum dots
2Surfaces
2Thermal annealing
2VPE
2Voltage capacity curve
1AES
1Activation energy
1Adsorption
1Argon ions
1Arsenic compounds
1Atomic force microscopy
1Binary compounds
1Bismuth
1Charge carrier injection
1Charge carrier mobility
1Charge carrier recombination
1Charge carrier trapping
1Charge carriers
1Circular polarization
1Cladding
1Crystal defects
1Crystal growth from vapors
1Defect density
1Drift velocity
1Electric field
1Electromotive force
1Electron hole pair
1Electronic structure
1Energy levels
1Enhancement layer
1Excitons
1Fermi level
1Ferromagnetic materials
1Gallium Indium Arsenides Mixed
1Gold
1Ground states
1III-V semiconductors
1Illumination
1Indium phosphides
1Inorganic compounds
1Landau levels
1MOVPE method
1Magnetic field effects
1Morphology
1Nanostructures
1Non linear effect
1Optical fibers
1Optical windows
1Overlayers
1Oxidation
1Photoconductivity
1Photoelectric effect
1Photoelectron emission
1Photoelectron spectroscopy
1Photoelectronic properties
1Photovoltaic effect
1Physical radiation effects
1Polishing
1Process control
1Property composition relationship
1Property structure relationship
1Proton beams
1Quantum size effect
1Quantum well
1Quantum yield
1Quenching
1Radiation effects
1Radiative recombination
1Random potential
1Recombination
1Scattering lengths
1Screening
1Segregation
1Selective etching
1Self-assembled layers
1Semiconductor quantum wells
1Solid solid interface

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