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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « N. S. Averkiev »
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N. Rubinina < N. S. Averkiev < N. S. Baryshev  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 6.
Ident.Authors (with country if any)Title
000131 (2009) Two channels of non-radiative recombination in InGaN/GaN LEDs
000137 (2009) Spin-dependent electron transport in a type II GaInAsSb/p-InAs heterojunction doped with Mn in quantized magnetic fields
000294 (2006) Role of fluctuations in carrier transfer in semiconductor heterostructures
000607 (2003) Separate electron-hole confinement in composite InAsyP1-y/GaxIn1-xAs quantum wells
001757 (1991) Polarization of the luminescence emitted from the surface of III-V heterostructure with a profiled substrate
001886 (1990) Recombination radiation from heavily-doped n-type indium antimonide crystals

List of associated KwdEn.i

Nombre de
documents		Descripteur
3Semiconductor materials
2Energy gap
2Experimental study
2Fermi level
2Heterostructures
2Indium arsenides
2Inorganic compound
2Photoluminescence
2Quantum wells
2Tunnel effect
11/f noise
1Acceptor center
1Aluminium arsenides
1Analytical method
1Anisotropy
1Band structure
1Charge carrier concentration
1Charge carrier recombination
1Charge carrier trapping
1Charge separation
1Charge transfer
1Confinement
1Defect density
1Double barrier structure
1Electrical properties
1Electron hole pair
1Electron mobility
1Electronic conductivity
1Electronic structure
1Energy level
1Energy-level splitting
1Epitaxial layers
1Exchange interactions
1Excitation spectrum
1Extended defect
1Fluctuations
1Gallium Antimonides
1Gallium Indium Antimonides arsenides Mixed
1Gallium Indium Nitrides Mixed
1Gallium arsenides
1Gallium nitride
1Gallium nitrides
1Gallium phosphide
1Hamiltonians
1Heterointerface
1Heterojunction
1Heterojunctions
1III-V compound
1III-V semiconductors
1IV characteristic
1Impurity
1Indium Antimonides
1Indium Antimonides arsenides phosphides
1Indium Arsenides
1Indium Arsenides phosphides
1Indium nitrides
1Landau levels
1Laser beam
1Level splitting
1Light emitting diode
1Localized exciton
1Magnetic field effects
1Magnetic moments
1Magnetoresistance
1Manganese additions
1Manganites
1Multiple quantum well
1Nanostructured materials
1Non radiative recombination
1Phase boundaries
1Phosphorus additions
1Photoconductivity
1Point defect
1Potential barrier
1Quantum Hall effect
1Quantum transport
1Radiation polarization
1Radiative recombination
1Residual stress
1Reversible processes
1Spectral line shift
1Spin polarization
1Spin polarized transport
1Stark effect
1Support
1Tellurium
1Ternary compounds
1Theoretical study
1Two-dimensional systems
1Uniaxial stress

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