N. N. Ledenstov < N. N. Ledentsov < N. N. Ledentsovl

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 188.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000066 (2011)		Quantum dot laser
000120 (2010)		Edge-emitting InGaAs/GaAs laser with high temperature stability of wavelength and threshold current
000209 (2008)		Energy characteristics of excitons in InGaN/GaN heterostructures
000223 (2007)		The impact of thermal effects on the performance of vertical-cavity surface-emitting lasers based on sub-monolayer InGaAs quantum dots
000241 (2007)		MBE-grown metamorphic lasers for applications at telecom wavelengths
000275 (2007)		Analysis of the local indium composition in ultrathin InGaN layers
000312 (2006)		Longitudinal photonic bandgap crystal laser diodes with ultra-narrow vertical beam divergence
000326 (2006)		Comparative study of GaAs-based 1.5 micron-range InAs/InGaAs and InAs/InAlAs self-assembled quantum dots
000331 (2006)		1.3-1.5 μm quantum dot lasers on foreign substrates : Growth using defect reduction technique, high-power CW operation, and degradation resistance
000334 (2005)		Ultrahigh gain and non-radiative recombination channels in 1.5 μm range metamorphic InAs-InGaAs quantum dot lasers on GaAs substrates
000348 (2005)		QD lasers : Physics and applications
000349 (2005)		Properties of InGaAsN heterostructures emitting at 1.3-1.55 μm
000367 (2005)		Long-wavelength lasers based on metamorphic quantum dots
000372 (2005)		High-power 1.3μm InAs/GaInAs/GaAs QD lasers grown in a multiwafer MBE production system
000374 (2005)		High power temperature-insensitive 1.3 μm InAs/InGaAs/GaAs quantum dot lasers
000401 (2004-06)		High-Power 1.5 μm InAs-InGaAs Quantum Dot Lasers on GaAs Substrates
000403 (2004-06)		Electroluminescent Studies of Emission Characteristics of InGaAsN/GaAs Injection Lasers in a Wide Temperature Range
000417 (2004-03)		Structural and Optical Properties of Heterostructures with InAs Quantum Dots in an InGaAsN Quantum Well Grown by Molecular-Beam Epitaxy
000501 (2003-12)		Lasing at 1.5 μm in Quantum Dot Structures on GaAs Substrates
000505 (2003-11-03)		Inherent nature of localized states in highly planar monolayer InAs/GaAsN pseudo-alloys
000514 (2003-10)		Temperature Characteristics of Low-Threshold High-Efficiency Quantum-Dot Lasers with the Emission Wavelength from 1.25 to 1.29 μm

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List of associated KwdEn.i

Nombre de documents	Descripteur
146	Experimental study
137	Gallium arsenides
85	Photoluminescence
80	Indium arsenides
80	Indium compounds
62	Semiconductor quantum dots
61	III-V semiconductors
59	Quantum dots
55	Molecular beam epitaxy
42	Semiconductor lasers
39	Binary compounds
34	Ternary compounds
26	Semiconductor materials
21	Current density
20	Quantum well lasers
20	Theoretical study
20	Threshold current
18	Excitons
18	TEM
17	Aluminium compounds
16	Island structure
15	Semiconductor growth
12	Self organization
12	Temperature dependence
11	Aluminium arsenides
11	Electroluminescence
11	Ground states
11	Interface states
11	Semiconductor heterojunctions
10	Heterostructures
10	Laser diodes
10	Optical properties
10	Transmission electron microscopy
9	Nanostructured materials
9	Output power
9	Quantum dot
9	Surface emitting lasers
8	Binary compound
8	Crystal growth from vapors
8	Infrared laser
8	Injection laser
8	Localized states
8	Monolayers
8	Vertical cavity laser
7	Gallium compounds
7	Nanostructures
7	Optical pumping
7	Quantum dot lasers
6	Arsenic compounds
6	CVD
6	Energy-level transitions
6	STM
6	Semiconductor quantum wells
6	Strains
5	Annealing
5	Excited states
5	Gallium nitrides
5	Growth mechanism
5	Heterojunctions
5	Indium nitrides
5	Interface structure
5	Measuring methods
5	Microcavity
5	Nitrogen compounds
5	Quantum wells
5	Semiconductor laser arrays
5	Silicon
5	Temperature effects
5	Wide band gap semiconductors
4	Continuous wave lasers
4	Crystal growth
4	DLTS
4	Gallium Arsenides
4	Heteroepitaxy
4	High temperature
4	III-V compound
4	Indium Arsenides
4	Light emitting diodes
4	Microelectronic fabrication
4	Optical waveguides
4	Quantum wires
4	Quantum yield
4	Semiconductor superlattices
4	Superlattices
4	Ultrathin films
3	Ambient temperature
3	CW lasers
3	Continuous wave
3	Crystal defects
3	Dislocations
3	Electronic structure
3	Energy gap
3	Epitaxial layers
3	Experiments
3	Far field
3	Gain
3	IV characteristic
3	Inclusions
3	Inorganic compounds
3	Integrated circuit

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