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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « N. N. Faleev »
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N. N. Efimova < N. N. Faleev < N. N. Gerasimenko  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 18.
Ident.Authors (with country if any)Title
000890 (2001-08) Anisotropy of the Spatial Distribution of In(Ga)As Quantum Dots in In(Ga)As-GaAs Multilayer Heterostructures Studied by X-ray and Synchrotron Diffraction and Transmission Electron Microscopy
000A28 (2000-12) Type II Broken-Gap InAs/GaIn0.17As0.22Sb Heterostructures with Abrupt Planar Interface
000C30 (1999-11) X-Ray diffraction analysis of multilayer InAs-GaAs heterostructures with InAs quantum dots
000D30 (1999-02) High resolution x-ray diffractometry of the structural characteristics of a semiconducting (InGa)As/GaAs superlattice
000D68 (1999) Ordered arrays of arsenic clusters coincided with InAs/GaAs superlattices grown by low-temperature MBE
000D93 (1999) Fourier analysis of X-ray rocking curves from superlattices
000E61 (1998-07) Effect of isovalent indium doping on excess arsenic in gallium arsenide grown by molecular-beam epitaxy at low temperatures
000E66 (1998-06) Self-organizing nanoheterostructures in InGaAsP solid solutions
000F06 (1998-01) High-resolution x-ray diffraction study of InAs-GaAs superlattices grown by molecular-beam epitaxy at low temperature
000F75 (1998) AlGaAsSb and AlGaInAsSb growth from Sb-rich solutions
001029 (1997-06-09) Enhanced arsenic excess in low-temperature grown GaAs due to indium doping
001063 (1997-01) Influence of mismatch of the lattice parameters on the structural, optical, and transport properties of InGaAs layers grown by molecular beam epitaxy on InP(100) substrates
001069 (1997) Two-dimensional precipitation of As clusters due to indium delta-doping of GaAs films grown by molecular beam epitaxy at low temperature
001113 (1997) InGaAsSb growth from Sb-rich solutions
001300 (1995-08) Effect of growth temperature on the electron mobility in InAlAs/InGaAs transistor structures grown on InP substrates by molecular beam epitaxy
001316 (1995-05-15) Energy levels and exciton oscillator strength in submonolayer InAs-GaAs heterostructures
001366 (1995) Nano-scale medium-range order in semiconducting glassy chalcogenides
001D66 (1986)

List of associated KwdEn.i

Nombre de
documents		Descripteur
16Experimental study
16Gallium arsenides
11XRD
8Molecular beam epitaxy
7III-V semiconductors
7Indium compounds
6Indium arsenides
4Binary compounds
4Semiconductor epitaxial layers
3Gallium antimonides
3LPE
3Semiconductor growth
3Semiconductor materials
2Aluminium arsenides
2Crystal growth
2Crystal structure
2Epitaxial layers
2Indium
2Indium additions
2Indium antimonides
2Infrared spectra
2Nanostructured materials
2Photoluminescence
2Semiconductor doping
2Semiconductor quantum dots
2Semiconductor superlattices
2Superlattices
2TEM
2Theoretical study
2Thermal annealing
1Aggregate
1Aluminium antimonides
1Amorphous semiconductors
1Amorphous state structure
1Annealing
1Antimony compounds
1Antisite defect
1Arsenic sulfides
1Atomic clusters
1Band structure
1Beryllium additions
1Chalcogenide glasses
1Characterization
1Chemical composition
1Chemical interdiffusion
1Composite materials
1Computerized simulation
1Crystal defects
1Crystal doping
1Crystal growth from vapors
1Crystal microstructure
1Crystal orientation
1Crystal perfection
1Doped materials
1Electrical conductivity
1Electron mobility
1Energy levels
1Fourier analysis
1Gallium Arsenides
1Gallium Indium Arsenides phosphides Mixed
1Gallium compounds
1Growth interface
1Heterojunction
1Heterostructures
1Impurity absorption spectra
1Interface structure
1Iodine additions
1Lattice parameters
1Light transmission
1Liquid solid interface
1Low temperature
1Mineral solvent
1Mismatch lattice
1Multilayers
1Nanostructures
1Noncrystalline structure
1Operating mode
1Optical anisotropy
1Optical properties
1Optical reflection
1Order
1Ordering
1Oscillator strengths
1Phase diagrams
1Photoelectron emission
1Planar doping
1Point defects
1Precipitation (chemical)
1Quantum size effect
1Quaternary compounds
1Rocking curve
1Semiconductor heterojunctions
1Silicon additions
1Solid clusters
1Solid solutions
1Solvents
1Spinodal decomposition
1Stoichiometry
1Strain control
1Structure determination

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