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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « N. N. Bezryadin »
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N. N. Belevich < N. N. Bezryadin < N. N. Chebotaev  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 8.
Ident.Authors (with country if any)Title
000B51 (2000) Preparation of In2Se3 layers on InAs by heterovalent substitution
000C23 (1999-12) Position of the Fermi level on an indium arsenide surface treated in sulfur vapor
001235 (1996) Preparation of In2Te3/InAs heterojunctions by heterovalent substitution
001347 (1995) Structure of indium sulfide layers on InAs
001752 (1991) Properties of an interface between InAs and a thin semiinsulating In2S3 film
001823 (1991) Electron processes in solid state heterostructures on the basis of indium arsenide
001A70 (1988) Heterostructures on the basis of indium arsenide with semi-insulating A2IIIB3VI compound layers
001D16 (1986) Electrophysical properties of In2Te2-InAs heterojunctions

List of associated KwdEn.i

Nombre de
documents		Descripteur
7Experimental study
5Semiconductor materials
4Heterojunction
3Heterojunctions
3Indium Arsenides
3Indium Sulfides
3Inorganic compound
3SEM
3Voltage capacity curve
2Binary compounds
2Crystal growth from vapors
2Hot wall growth
2Indium arsenides
2Ion substitution
2Thin films
2Transport process
2Voltage current curve
1AES
1Chemical composition
1Chemical reactions
1Coatings
1Controlled atmospheres
1Crystal orientation
1Crystal structure
1Electric field
1Electron diffraction
1Electron microprobe
1Electron probe
1Fermi level
1Free carrier
1Gallium Indium Tellurides Mixed
1III-V semiconductors
1Indium Tellurides
1Indium compounds
1Indium selenides
1Indium sulfides
1Indium tellurides
1Interfacial layer
1Lattice parameters
1MIS structure
1Microanalysis
1RHEED
1Shielding effect
1Solid solid interface
1Surface states
1Surface treatments
1Theoretical study
1Thermal annealing
1Thick film
1Work functions
1X ray

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