Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « N. M. Kolchanova »
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N. M. Igonina < N. M. Kolchanova < N. M. Kolcharnova  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 26.
[0-20] [0 - 20][0 - 26][20-25][20-40]
Ident.Authors (with country if any)Title
000561 (2003-04) Current and Temperature Tuning of Quantum-Well Lasers Operating in 2.0- to 2.4-μm Range
000652 (2003) InAsSb/InAsSbP current-tunable laser with narrow spectral line width
000711 (2002-11) Flattening of Dynamic Dielectric Phase Grating and Single-Mode Lasing under the Conditions of Transverse Oscillations of Luminous Flux
000745 (2002-05) Spectral Line Width of the Current-Tunable Lasers on the Base of InAsSb/InAsSbP at Low Temperature
000791 (2002) Single mode laser based on InAsSb/InAsSbP double heterostructure with tuning from 3.224 to 3.234 μm
000862 (2001-12) InAsSb/InAsSbP Double-Heterostructure Lasers Emitting in the 3-4 μm Spectral Range
000892 (2001-07) Ultimate InAsSbP Solid Solutions for 2.6-2.8-μm LEDs
000905 (2001-04) The spectral linewidth of tunable semiconductor InAsSb/InAsSbP lasers emitting at 3.2-3.6 μm (2800-3100 cm-1)
000918 (2001-03) Current-Tunable Lasers with a Narrow Emission Line Operating at 3.3 μm
000A33 (2000-12) Emission-Line Broadening of Current Tunable InAsSbP/InAsSb/InAsSbP Heterostructure Lasers
000A43 (2000-09-20) Tunable InAsSb/InAsSbP Laser with a Low Radiation Divergence in the p-n-Junction Plane
000B18 (2000-02) Single-Mode InAsSb/InAsSbP Laser (λ ≃ 3.2 μm) Tunable over 100 Å
000C21 (1999-12) Two-mode diode-laser spectroscopy with a InAsSb/InAsSbP laser near 3.6 μm
000C41 (1999-10) InAsSb/InAsSbP heterostructure lasers with a large range of current tuning of the lasing frequency
000C51 (1999-09) Short-wavelength current tuning of InAsSb/InAsSbP heterostructure lasers caused by an injection nonuniformity
000C63 (1999-08) Spatial beam oscillations in stripe lasers utilizing InAsSb/InAsSbP heterojunctions
000D24 (1999-02) Rapid tuning of the generation frequency of InAsSb/InAsSbP diode lasers (λ=3.3μm) due to nonlinear optical effects
000F54 (1998) Fast tuning of 3.3 μm InAsSb/InAsSbP diode lasers using nonlinear optical effects
001012 (1997-08) InAsSb/InAsSbP diode lasers with separate electrical and optical confinement, emitting at 3-4 μm
001033 (1997-06) Influence of charge carriers on tuning in InAsSb lasers
001159 (1996-08) Using current to tune the wavelength of InAsSb/InAsSbP double-heterostructure lasers

List of associated KwdEn.i

Nombre de
documents
Descripteur
22Experimental study
18Indium compounds
18Semiconductor lasers
11Antimony compounds
11Arsenic compounds
10Laser tuning
7Semiconductor heterojunctions
6III-V semiconductors
5Theoretical study
4Carrier density
4Electric currents
4Phosphorus compounds
3Indium antimonides
3Quaternary compounds
2Electroluminescence
2Gallium antimonides
2Gallium arsenides
2Heterojunctions
2Heterostructures
2Indium Antimonides
2Indium arsenides
2Inorganic compound
2Instrumentation
2LPE
2Nonlinear optics
2Recombination
2Refractive index
2Semiconductor diodes
2Semiconductor materials
2Spectral shift
2Ternary compounds
1Absorption coefficients
1Absorption spectra
1Acceptor center
1Aluminium compounds
1Ammonia
1Antimonides
1Application
1Arsenides
1Auger effect
1Auger recombination
1Carrier concentration
1Carrier lifetime
1Charge carrier
1Closed cycle helium cryostat
1Cryostats
1Cubic crystals
1Current density
1Diodes
1Donor center
1Double heterojunction
1Electron-hole recombination
1Epitaxial layers
1Experiments
1Fabry Perot Cavity length
1Gallium Indium Antimonides arsenides Mixed
1Gallium compounds
1Heating
1Heterojunction
1Hole concentration
1Hot carriers
1Impurity ionization
1Indium Arsenides
1Indium Phosphides
1Indium phosphides
1Infrared laser
1Infrared spectra
1Infrared spectroscopy
1Injection laser
1Interface phenomena
1Laser cavities
1Laser diodes
1Laser frequency stability
1Laser modes
1Laser radiation
1Laser theory
1Laser width
1Layers
1Lifetime
1Light emitting diode
1Light emitting diodes
1Line broadening
1Line widths
1Liquid phase epitaxy
1Measuring methods
1Molecular beam epitaxy
1N-type conductors
1Nitrogen compounds
1Non radiative recombination
1Optical absorption
1Optical waveguides
1Organic compounds
1Oxygen compounds
1Performance characteristic
1Quantum mechanics
1Quantum well lasers
1Quantum yield
1Radiationless decay
1Radiative decay
1Radiative recombination

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